 |  | | |
| PartNumber | ATF-511P8-TR1 | ATF-511P8-TR1G | ATF-511P8-TR1GG |
| Description | RF JFET Transistors Transistor GaAs High Linearity | ||
| Manufacturer | Broadcom Limited | AVAGO | - |
| Product Category | RF JFET Transistors | IC Chips | - |
| RoHS | Y | - | - |
| Transistor Type | EpHEMT | - | - |
| Technology | GaAs | - | - |
| Gain | 14.8 dB | - | - |
| Vds Drain Source Breakdown Voltage | 7 V | - | - |
| Vgs Gate Source Breakdown Voltage | - 5 V to 1 V | - | - |
| Id Continuous Drain Current | 1 A | - | - |
| Maximum Drain Gate Voltage | - 5 V to + 1 V | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 3 W | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | LPCC-8 | - | - |
| Packaging | Reel | - | - |
| Configuration | Single Dual Source | - | - |
| Operating Frequency | 2 GHz | - | - |
| Product | RF JFET | - | - |
| Type | GaAs EpHEMT | - | - |
| Brand | Broadcom / Avago | - | - |
| Forward Transconductance Min | 2178 mmho | - | - |
| NF Noise Figure | 1.4 dB | - | - |
| P1dB Compression Point | 30 dBm | - | - |
| Product Type | RF JFET Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Broadcom / Avago |
ATF-511P8-TR1 | RF JFET Transistors Transistor GaAs High Linearity | |
| ATF-511P8-TR1 | RF JFET Transistors Transistor GaAs High Linearity | ||
| ATF-511P8-TR1G | ブランドニューオリジナル | ||
| ATF-511P8-TR1GG | ブランドニューオリジナル |