 |  | | |
| PartNumber | ATF-58143-TR1G | ATF-58143-TR1 | ATF-58143-TR1GG |
| Description | RF JFET Transistors Transistor GaAs Single Voltage | ||
| Manufacturer | Broadcom Limited | - | |
| Product Category | RF JFET Transistors | RF FETs | - |
| RoHS | Y | - | - |
| Transistor Type | EpHEMT | EpHEMT | - |
| Technology | GaAs | GaAs | - |
| Gain | 16.5 dB | 16.5 dB | - |
| Vds Drain Source Breakdown Voltage | 5 V | - | - |
| Vgs Gate Source Breakdown Voltage | - 5 V to 1 V | - | - |
| Id Continuous Drain Current | 100 mA | - | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 500 mW (1/2 W) | - | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-343 | - | - |
| Packaging | Reel | Reel | - |
| Configuration | Single Dual Source | Single Dual Source | - |
| Operating Frequency | 2 GHz | 2 GHz | - |
| Product | RF JFET | - | - |
| Type | GaAs EpHEMT | - | - |
| Brand | Broadcom / Avago | - | - |
| Forward Transconductance Min | 410 mmho | - | - |
| NF Noise Figure | 0.5 dB | - | - |
| P1dB Compression Point | 19 dBm | - | - |
| Product Type | RF JFET Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Package Case | - | SOT-343 | - |
| Pd Power Dissipation | - | 500 mW | - |
| Id Continuous Drain Current | - | 100 mA | - |
| Vds Drain Source Breakdown Voltage | - | 5 V | - |
| Forward Transconductance Min | - | 410 mmho | - |
| Vgs Gate Source Breakdown Voltage | - | - 5 V to 1 V | - |
| NF Noise Figure | - | 0.5 dB | - |
| P1dB Compression Point | - | 19 dBm | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Broadcom / Avago |
ATF-58143-TR1G | RF JFET Transistors Transistor GaAs Single Voltage | |
| ATF-58143-TR1G | ブランドニューオリジナル | ||
| ATF-58143-TR1 | ブランドニューオリジナル | ||
| ATF-58143-TR1GG | ブランドニューオリジナル |