 | |  | |
| PartNumber | AUIRF2805STRL | AUIRF2805S | AUIRF2805STRR |
| Description | MOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhms | MOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhms | RF Bipolar Transistors MOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhms |
| Manufacturer | Infineon | Infineon | International Rectifier |
| Product Category | MOSFET | MOSFET | Transistors - FETs, MOSFETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 55 V | 55 V | - |
| Id Continuous Drain Current | 135 A | 135 A | - |
| Rds On Drain Source Resistance | 4.7 mOhms | 4.7 mOhms | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 150 nC | 150 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Pd Power Dissipation | 200 W | 200 W | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Tube | Reel |
| Height | 2.3 mm | 2.3 mm | - |
| Length | 6.5 mm | 6.5 mm | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 6.22 mm | 6.22 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 110 ns | 110 ns | 110 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 120 ns | 120 ns | 120 ns |
| Factory Pack Quantity | 800 | 1000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 68 ns | 68 ns | 68 ns |
| Typical Turn On Delay Time | 14 ns | 14 ns | 14 ns |
| Part # Aliases | SP001519248 | SP001519486 | - |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Package Case | - | - | TO-252-3 |
| Pd Power Dissipation | - | - | 200 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 135 A |
| Vds Drain Source Breakdown Voltage | - | - | 55 V |
| Rds On Drain Source Resistance | - | - | 4.7 mOhms |
| Qg Gate Charge | - | - | 150 nC |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
AUIRF2805STRL | MOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhms | |
| AUIRF2805S | MOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhms | ||
| AUIRF2805S | MOSFET N-CH 55V 135A D2PAK | ||
| AUIRF2805STRR | RF Bipolar Transistors MOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhms | ||
| AUIRF2805STRL | RF Bipolar Transistors MOSFET AUTO 55V 1 N-CH HEXFET 4.7mOhms |