 | | |
| PartNumber | AUIRF7103QTR | AUIRF7103Q |
| Description | MOSFET AUTO 50V 1 N-CH HEXFET 130mOhms | MOSFET AUTO 50V 1 N-CH HEXFET 130mOhms |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SO-8 | SO-8 |
| Number of Channels | 2 Channel | 2 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 50 V | 50 V |
| Id Continuous Drain Current | 3 A | 3 A |
| Rds On Drain Source Resistance | 200 mOhms | 200 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 10 nC | 10 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | - |
| Pd Power Dissipation | 2.4 W | 2.4 W |
| Configuration | Dual | Dual |
| Channel Mode | Enhancement | Enhancement |
| Qualification | AEC-Q101 | - |
| Packaging | Reel | Tube |
| Height | 1.75 mm | 1.75 mm |
| Length | 4.9 mm | 4.9 mm |
| Transistor Type | 2 N-Channel | 2 N-Channel |
| Width | 3.9 mm | 3.9 mm |
| Brand | Infineon / IR | Infineon / IR |
| Forward Transconductance Min | 3.4 S | - |
| Fall Time | 2.3 ns | 2.3 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 1.7 ns | 1.7 ns |
| Factory Pack Quantity | 4000 | 95 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 15 ns | 15 ns |
| Typical Turn On Delay Time | 5.1 ns | 5.1 ns |
| Part # Aliases | SP001517980 | SP001521578 |
| Unit Weight | 0.017870 oz | 0.019048 oz |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon / IR |
AUIRF7103QTR | MOSFET AUTO 50V 1 N-CH HEXFET 130mOhms | |
| AUIRF7103Q | MOSFET AUTO 50V 1 N-CH HEXFET 130mOhms | ||
Infineon Technologies |
AUIRF7103Q | MOSFET 2N-CH 50V 3A 8SOIC | |
| AUIRF7103QTR | MOSFET 2N-CH 50V 3A 8SOIC | ||
| AUIRF7103QTRPBF | ブランドニューオリジナル | ||
| AUIRF7103QTR. | ブランドニューオリジナル |