 | |  | |
| PartNumber | AUIRFN8459TR | AUIRFN8458TR | AUIRFN8458TRPBF |
| Description | MOSFET 40V Dual N Channel HEXFET | MOSFET 40V Dual N Channel HEXFET | |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | PQFN-8 | PQFN-8 | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
| Id Continuous Drain Current | 70 A | 43 A | - |
| Rds On Drain Source Resistance | 5.9 mOhms | 10 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 3 V | 3.9 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 40 nC | 22 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 175 C | + 175 C | - |
| Pd Power Dissipation | 50 W | 34 W | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | - |
| Height | 1.2 mm | 1.2 mm | - |
| Length | 6 mm | 6 mm | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Width | 5 mm | 5 mm | - |
| Brand | Infineon / IR | Infineon / IR | - |
| Forward Transconductance Min | 66 S | 56 S | - |
| Fall Time | 42 ns | 19 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 55 ns | 71 ns | - |
| Factory Pack Quantity | 4000 | 4000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 25 ns | 11 ns | - |
| Typical Turn On Delay Time | 10 ns | 9.7 ns | - |
| Part # Aliases | SP001517406 | SP001522712 | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon / IR |
AUIRFN8459TR | MOSFET 40V Dual N Channel HEXFET | |
| AUIRFN8458TR | MOSFET 40V Dual N Channel HEXFET | ||
| AUIRFN8458TRPBF | ブランドニューオリジナル | ||
Infineon Technologies |
AUIRFN8459TR | MOSFET 2N-CH 40V 50A 8PQFN | |
| AUIRFN8458TR | MOSFET 2N-CH 40V 43A 8PQFN |