BAS1602V

BAS1602VH6327XTSA1 vs BAS1602VH6327 vs BAS1602VH6327XT

 
PartNumberBAS1602VH6327XTSA1BAS1602VH6327BAS1602VH6327XT
DescriptionDiodes - General Purpose, Power, Switching AF DIODERectifier Diode, 1 Element, 85V V(RRM)Diodes - General Purpose, Power, Switching AF DIODE
ManufacturerInfineon-Infineon Technologies
Product CategoryDiodes - General Purpose, Power, Switching-Diodes, Rectifiers - Single
RoHSY--
ProductSwitching Diodes--
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseSC-79-2--
Peak Reverse Voltage85 V--
Max Surge Current2.5 A--
If Forward Current200 mA--
ConfigurationSingle--
Recovery Time4 ns--
Vf Forward Voltage1250 mV--
Ir Reverse Current50 uA--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
SeriesBAS16-BAS16
QualificationAEC-Q101--
PackagingReel-Digi-ReelR Alternate Packaging
BrandInfineon Technologies--
Pd Power Dissipation250 mW--
Product TypeDiodes - General Purpose, Power, Switching--
Factory Pack Quantity3000--
SubcategoryDiodes & Rectifiers--
Part # Aliases16-02V BAS BAS162VH6327XT H6327 SP000752008--
Unit Weight0.000056 oz--
Part Aliases--16-02V BAS BAS1602VH6327XT H6327 SP000752008
Package Case--SC-79, SOD-523
Mounting Type--Surface Mount
Supplier Device Package--PG-SC79-2
Speed--Small Signal =
Diode Type--Standard
Current Reverse Leakage Vr--1μA @ 75V
Voltage Forward Vf Max If--1.25V @ 150mA
Voltage DC Reverse Vr Max--80V
Current Average Rectified Io--200mA (DC)
Reverse Recovery Time trr--4ns
Capacitance Vr F--2pF @ 0V, 1MHz
Operating Temperature Junction--150°C (Max)
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Infineon Technologies
Infineon Technologies
BAS1602VH6327XTSA1 Diodes - General Purpose, Power, Switching AF DIODE
BAS1602VH6327XTSA1 Schottky Diodes & Rectifiers AF DIODE
BAS1602VH6327 Rectifier Diode, 1 Element, 85V V(RRM)
BAS1602VH6327XT Diodes - General Purpose, Power, Switching AF DIODE
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