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| PartNumber | BC817K25E6327HTSA1 | BC817K25E6433HTMA1 |
| Description | Bipolar Transistors - BJT AF TRANS GP BJT NPN 45V 0.5A | Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR |
| Manufacturer | Infineon | Infineon |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 |
| Transistor Polarity | NPN | NPN |
| Configuration | Single | Single |
| Collector Emitter Voltage VCEO Max | 45 V | 45 V |
| Collector Base Voltage VCBO | 50 V | 50 V |
| Emitter Base Voltage VEBO | 5 V | 5 V |
| Collector Emitter Saturation Voltage | 0.7 V | 0.7 V |
| Maximum DC Collector Current | 1000 mA | 1000 mA |
| Gain Bandwidth Product fT | 170 MHz | 170 MHz |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Series | BC817 | BC817 |
| DC Current Gain hFE Max | 400 at 100 mA, 1 V | 400 at 100 mA, 1 V |
| Packaging | Reel | Reel |
| Brand | Infineon Technologies | Infineon Technologies |
| Continuous Collector Current | 500 mA | 500 mA |
| DC Collector/Base Gain hfe Min | 160 at 100 mA, 1 V | 160 at 100 mA, 1 V |
| Pd Power Dissipation | 500 mW | 500 mW |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors |
| Factory Pack Quantity | 3000 | 10000 |
| Subcategory | Transistors | Transistors |
| Part # Aliases | 817K-25 BC BC817K25E6327XT E6327 SP000271875 | 817K-25 BC BC817K25E6433XT E6433 SP000271879 |
| Unit Weight | 0.000282 oz | 0.000282 oz |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
BC817K25E6327HTSA1 | Bipolar Transistors - BJT AF TRANS GP BJT NPN 45V 0.5A | |
| BC817K25E6433HTMA1 | Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR | ||
| BC817K25E6327HTSA1 | TRANS NPN 45V 0.5A SOT-23 | ||
| BC817K25E6433HTMA1 | TRANS NPN 45V 0.5A SOT-23 | ||
| BC817K25E6327 | ブランドニューオリジナル | ||
| BC817K25E6327XT | Trans GP BJT NPN 45V 0.5A 3-Pin SOT-23 T/R - Tape and Reel (Alt: BC817K25E6327HTSA1) |