 | |  | |
| PartNumber | BC857SH6327XTSA1 | BC857SH6327XT | BC857SH6327 |
| Description | Bipolar Transistors - BJT AF TRANSISTOR | Bipolar Transistors - BJT AF TRANSISTOR | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon |
| Manufacturer | Infineon | Infineon | Infineon Technologies |
| Product Category | Bipolar Transistors - BJT | Bipolar Transistors - BJT | Transistors (BJT) - Arrays |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-363-6 | SOT-363-6 | - |
| Transistor Polarity | PNP | PNP | - |
| Configuration | Dual | Dual | - |
| Collector Emitter Voltage VCEO Max | 45 V | 45 V | - |
| Collector Base Voltage VCBO | 50 V | 50 V | - |
| Emitter Base Voltage VEBO | 5 V | 5 V | - |
| Collector Emitter Saturation Voltage | 250 mV | 250 mV | - |
| Maximum DC Collector Current | 200 mA | 200 mA | - |
| Gain Bandwidth Product fT | 250 MHz | 250 MHz | - |
| Minimum Operating Temperature | - 65 C | - 65 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Series | BC857 | - | BC857 |
| DC Current Gain hFE Max | 630 | 630 | - |
| Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Continuous Collector Current | 100 mA | 100 mA | - |
| DC Collector/Base Gain hfe Min | 200 | 200 | - |
| Pd Power Dissipation | 250 mW | 250 mW | - |
| Product Type | BJTs - Bipolar Transistors | BJTs - Bipolar Transistors | - |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | Transistors | Transistors | - |
| Part # Aliases | 857S BC BC857SH6327XT H6327 SP000747456 | 857S BC BC857SH6327XTSA1 H6327 SP000747456 | - |
| Unit Weight | 0.000265 oz | 0.000265 oz | - |
| Part Aliases | - | - | 857S BC BC857SH6327XT H6327 SP000747456 |
| Package Case | - | - | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | - | - | Surface Mount |
| Supplier Device Package | - | - | PG-SOT363-6 |
| Power Max | - | - | 250mW |
| Transistor Type | - | - | 2 PNP (Dual) |
| Current Collector Ic Max | - | - | 100mA |
| Voltage Collector Emitter Breakdown Max | - | - | 45V |
| DC Current Gain hFE Min Ic Vce | - | - | 200 @ 2mA, 5V |
| Vce Saturation Max Ib Ic | - | - | 650mV @ 5mA, 100mA |
| Current Collector Cutoff Max | - | - | 15nA (ICBO) |
| Frequency Transition | - | - | 250MHz |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
BC857SH6327XTSA1 | Bipolar Transistors - BJT AF TRANSISTOR | |
| BC857SH6327XT | Bipolar Transistors - BJT AF TRANSISTOR | ||
| BC857SH6327XTSA1 | TRANS 2PNP 45V 0.1A SOT363 | ||
| BC857SH6327XT | Bipolar Transistors - BJT AF TRANSISTOR | ||
| BC857SH6327 | Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 2-Element, PNP, Silicon |