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| PartNumber | BCV64B,215 | BCV64B | BCV64B215 |
| Description | Bipolar Transistors - BJT TRANS GP TAPE-7 | Now Nexperia BCV64B - Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 2-Element, PNP, Silicon, SOT4 | |
| Manufacturer | Nexperia | NXP | - |
| Product Category | Bipolar Transistors - BJT | Transistors (BJT) - Arrays | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-143B-4 | - | - |
| Transistor Polarity | PNP | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 6 V, 30 V | - | - |
| Collector Base Voltage VCBO | 6 V, 30 V | - | - |
| Emitter Base Voltage VEBO | 6 V | - | - |
| Maximum DC Collector Current | 0.1 A | - | - |
| Gain Bandwidth Product fT | 100 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| DC Current Gain hFE Max | 220 at 2 mA, 5 V | - | - |
| Height | 1 mm | - | - |
| Length | 3 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.4 mm | - | - |
| Brand | Nexperia | - | - |
| DC Collector/Base Gain hfe Min | 220 at 2 mA, 5 V at TR 1 , 220 at 2 mA, 700 mV at TR 2 | - | - |
| Pd Power Dissipation | 250 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Qualification | AEC-Q101 | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Part # Aliases | BCV64B T/R | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Nexperia |
BCV64B,215 | Bipolar Transistors - BJT TRANS GP TAPE-7 | |
| BCV64B,215 | Bipolar Transistors - BJT TRANS GP TAPE-7 | ||
| BCV64B | ブランドニューオリジナル | ||
NXP Semiconductors |
BCV64B215 | Now Nexperia BCV64B - Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 2-Element, PNP, Silicon, SOT4 |