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| PartNumber | BCX5510TA | BCX5510 | BCX5510E6327 |
| Description | Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT89 T&R 1K | Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA | |
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | Bipolar Transistors - BJT | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-89-3 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 60 V | - | - |
| Collector Base Voltage VCBO | 60 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Maximum DC Collector Current | 1 A | - | - |
| Gain Bandwidth Product fT | 150 MHz | - | - |
| Minimum Operating Temperature | - 65 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | BCX55 | - | - |
| DC Current Gain hFE Max | 63 at 150 mA, 2 V | - | - |
| Height | 1.6 mm | - | - |
| Length | 4.6 mm | - | - |
| Packaging | Reel | - | - |
| Width | 2.6 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| DC Collector/Base Gain hfe Min | 63 at 150 mA, 2 V | - | - |
| Pd Power Dissipation | 1000 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.001834 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Diodes Incorporated |
BCX5510TA | Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT89 T&R 1K | |
| BCX5510 | Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-243AA | ||
| BCX5510E6327 | ブランドニューオリジナル | ||
| BCX5510TA(BG) | ブランドニューオリジナル | ||
| BCX5510TA | Bipolar Transistors - BJT Pwr Mid Perf Transistor SOT89 T&R 1K |