 |  | |
| PartNumber | BFQ19SH6327XTSA1 | BFQ19SH6327 |
| Description | Bipolar Transistors - BJT RF BIP TRANSISTORS | Low Noise Silicon Bipolar RF Transisto |
| Manufacturer | Infineon | - |
| Product Category | Bipolar Transistors - BJT | - |
| RoHS | Y | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | SOT-89-4 | - |
| Transistor Polarity | NPN | - |
| Configuration | Single | - |
| Collector Emitter Voltage VCEO Max | 15 V | - |
| Collector Base Voltage VCBO | 20 V | - |
| Emitter Base Voltage VEBO | 3 V | - |
| Gain Bandwidth Product fT | 5.5 GHz | - |
| Minimum Operating Temperature | - 65 C | - |
| Maximum Operating Temperature | + 150 C | - |
| DC Current Gain hFE Max | 140 | - |
| Height | 1.5 mm | - |
| Length | 4.5 mm | - |
| Packaging | Reel | - |
| Width | 2.5 mm | - |
| Brand | Infineon Technologies | - |
| Continuous Collector Current | 120 mA | - |
| DC Collector/Base Gain hfe Min | 70 | - |
| Pd Power Dissipation | 1 W | - |
| Product Type | BJTs - Bipolar Transistors | - |
| Factory Pack Quantity | 1000 | - |
| Subcategory | Transistors | - |
| Part # Aliases | 19S BFQ H6327 SP001125294 | - |
| Unit Weight | 0.004603 oz | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
BFQ19SH6327XTSA1 | Bipolar Transistors - BJT RF BIP TRANSISTORS | |
| BFQ19SH6327 | Low Noise Silicon Bipolar RF Transisto | ||
| BFQ19SH6327XTSA1 | Bipolar Transistors - BJT RF BIP TRANSISTORS |