BLL6H1214-5

BLL6H1214-500 vs BLL6H1214-500112 vs BLL6H1214-500,112

 
PartNumberBLL6H1214-500BLL6H1214-500112BLL6H1214-500,112
DescriptionLDMOS,RF,500W,1200M-1400MHZ,50V, Drain Source Voltage Vds:100V, Continuous Drain Current Id:45A, Power Dissipation Pd:500W, Operating Frequency Min:1.03GHz, Operating Frequency Max:1.09GHz, RF TBLL6H1214-500/SOT539/TRAYRF MOSFET Transistors TRANS L-BAND RADAR LDMOS
Manufacturer--NXP
Product Category--RF FETs
メーカー モデル 説明 RFQ
NXP Semiconductors
NXP Semiconductors
BLL6H1214-500 LDMOS,RF,500W,1200M-1400MHZ,50V, Drain Source Voltage Vds:100V, Continuous Drain Current Id:45A, Power Dissipation Pd:500W, Operating Frequency Min:1.03GHz, Operating Frequency Max:1.09GHz, RF T
BLL6H1214-500112 BLL6H1214-500/SOT539/TRAY
BLL6H1214-500,112 RF MOSFET Transistors TRANS L-BAND RADAR LDMOS
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