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| PartNumber | BLX15 | BLX15 C | BLX15 D |
| Description | RF Bipolar Transistors RF Transistor | ||
| Manufacturer | Advanced Semiconductor, Inc. | - | - |
| Product Category | RF Bipolar Transistors | - | - |
| RoHS | Y | - | - |
| Transistor Type | Bipolar Power | - | - |
| Technology | Si | - | - |
| Transistor Polarity | NPN | - | - |
| DC Collector/Base Gain hfe Min | 15 | - | - |
| Collector Emitter Voltage VCEO Max | 55 V | - | - |
| Emitter Base Voltage VEBO | 4 V | - | - |
| Continuous Collector Current | 10 A | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 200 C | - | - |
| Mounting Style | Through Hole | - | - |
| Packaging | Tray | - | - |
| Operating Frequency | 28 MHz | - | - |
| Type | RF Bipolar Power | - | - |
| Brand | Advanced Semiconductor, Inc. | - | - |
| Maximum DC Collector Current | 20 A | - | - |
| Pd Power Dissipation | 233 W | - | - |
| Product Type | RF Bipolar Transistors | - | - |
| Subcategory | Transistors | - | - |