BSB028N06NN3

BSB028N06NN3 G vs BSB028N06NN3 vs BSB028N06NN3G

 
PartNumberBSB028N06NN3 GBSB028N06NN3BSB028N06NN3G
DescriptionMOSFET N-Ch 60V 90A CanPAK3 MN OptiMOS 3Trans MOSFET N-CH 60V 22A 7-Pin WDSON T/R - Tape and Reel (Alt: BSB028N06NN3GXUMA1)
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseWDSON-2-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current90 A--
Rds On Drain Source Resistance2.8 mOhms--
Vgs Gate Source Voltage20 V--
Qg Gate Charge108 nC--
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation78 W--
ConfigurationSingleSingle Quad Drain Dual Source-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height0.7 mm--
Length6.35 mm--
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width5.05 mm--
BrandInfineon Technologies--
Fall Time6 ns6 ns-
Moisture SensitiveYes--
Product TypeMOSFET--
Rise Time9 ns9 ns-
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time38 ns38 ns-
Typical Turn On Delay Time21 ns21 ns-
Part # AliasesBSB028N06NN3GXUMA1 BSB28N6NN3GXT SP000605956--
Part Aliases-BSB028N06NN3GXT BSB028N06NN3GXUMA1 SP000605956-
Package Case-WDSON-2-
Pd Power Dissipation-78 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-90 A-
Vds Drain Source Breakdown Voltage-60 V-
Rds On Drain Source Resistance-2.8 mOhms-
Qg Gate Charge-108 nC-
メーカー モデル 説明 RFQ
Infineon Technologies
Infineon Technologies
BSB028N06NN3 G MOSFET N-Ch 60V 90A CanPAK3 MN OptiMOS 3
BSB028N06NN3GXUMA1 MOSFET N-CH 60V 22A WDSON-2
BSB028N06NN3 ブランドニューオリジナル
BSB028N06NN3 G MOSFET N-Ch 60V 90A CanPAK3 MN OptiMOS 3
BSB028N06NN3G Trans MOSFET N-CH 60V 22A 7-Pin WDSON T/R - Tape and Reel (Alt: BSB028N06NN3GXUMA1)
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