BSB04

BSB044N08NN3 G vs BSB044N08NN vs BSB044N08NN3 G3

 
PartNumberBSB044N08NN3 GBSB044N08NNBSB044N08NN3 G3
DescriptionMOSFET N-Ch 80V 90A CanPAK3 MN OptiMOS 3
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMT--
Package / CaseWDSON-2-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage80 V--
Id Continuous Drain Current90 A--
Rds On Drain Source Resistance3.7 mOhms--
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge73 nC--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation78 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height0.7 mm--
Length6.35 mm--
SeriesOptiMOS 3OptiMOS 3-
Transistor Type1 N-Channel1 N-Channel-
Width5.05 mm--
BrandInfineon Technologies--
Forward Transconductance Min36 S--
Fall Time7 ns--
Moisture SensitiveYes--
Product TypeMOSFET--
Rise Time9 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time26 ns--
Typical Turn On Delay Time14 ns--
Part # AliasesBSB044N08NN3GXUMA1 BSB44N8NN3GXT SP000604542--
Part Aliases-BSB044N08NN3GXT BSB044N08NN3GXUMA1 SP000604542-
Package Case-WDSON-2-
Id Continuous Drain Current-90 A-
Vds Drain Source Breakdown Voltage-80 V-
Rds On Drain Source Resistance-4.4 mOhms-
メーカー モデル 説明 RFQ
Infineon Technologies
Infineon Technologies
BSB044N08NN3 G MOSFET N-Ch 80V 90A CanPAK3 MN OptiMOS 3
BSB044N08NN3GXUMA1 MOSFET N-Ch 80V 90A CanPAK3 MN OptiMOS 3
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BSB044N08NN ブランドニューオリジナル
BSB044N08NN3 G3 ブランドニューオリジナル
BSB044N08NN3G ブランドニューオリジナル
BSB044N08NN3GTR ブランドニューオリジナル
BSB04505HA ブランドニューオリジナル
BSB044N08NN3 G MOSFET N-Ch 80V 90A CanPAK3 MN OptiMOS 3
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