 | | | |
| PartNumber | BSC016N06NS | BSC016N04LS G | BSC016N04LSGATMA1 |
| Description | MOSFET N-Ch 60V 100A DSON-8 OptiMOS | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 40 V | 40 V |
| Id Continuous Drain Current | 100 A | 100 A | 100 A |
| Rds On Drain Source Resistance | 1.6 mOhms | 1.3 mOhms | 1.3 mOhms |
| Vgs th Gate Source Threshold Voltage | 2.1 V | 1.2 V | 1.2 V |
| Vgs Gate Source Voltage | 10 V | 20 V | 20 V |
| Qg Gate Charge | 71 nC | 150 nC | 150 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 139 W | 139 W | 139 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm | 5.9 mm |
| Series | OptiMOS 5 | OptiMOS 3 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.15 mm | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 70 S | 95 S | 95 S |
| Fall Time | 9 ns | 9.4 ns | 9.4 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 9 ns | 7.6 ns | 7.6 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 35 ns | 56 ns | 56 ns |
| Typical Turn On Delay Time | 19 ns | 14 ns | 14 ns |
| Part # Aliases | BSC016N06NSATMA1 BSC16N6NSXT SP000924882 | BSC016N04LSGATMA1 BSC16N4LSGXT SP000394801 | BSC016N04LS BSC16N4LSGXT G SP000394801 |
| Unit Weight | 0.003527 oz | - | 0.004201 oz |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC016N06NSTATMA1 | MOSFET DIFFERENTIATED MOSFETS | |
| BSC016N06NS | MOSFET N-Ch 60V 100A DSON-8 OptiMOS | ||
| BSC016N06NSATMA1 | MOSFET N-Ch 60V 100A DSON-8 OptiMOS | ||
| BSC018NE2LS | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | ||
| BSC018N04LS G | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
| BSC018NE2LSI | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | ||
| BSC019N02KS G | MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2 | ||
| BSC016N04LS G | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
| BSC017N04NS G | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
| BSC016N04LSGATMA1 | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
| BSC018NE2LSIXT | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | ||
| BSC018N04LSGXT | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
| BSC018N04LSGXT | MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
| BSC018NE2LSIXT | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | ||
| BSC016N04LS G | Trans MOSFET N-CH 40V 31A 8-Pin TDSON EP | ||
| BSC016N04LSGATMA1 | MOSFET N-CH 40V 100A TDSON-8 | ||
| BSC016N06NS | MOSFET N-Ch 60V 100A DSON-8 OptiMOS | ||
| BSC016N06NSATMA1 | MOSFET N-CH 60V 30A TDSON-8 | ||
| BSC017N04NS G | Trans MOSFET N-CH 40V 30A 8-Pin TDSON EP | ||
| BSC017N04NSGATMA1 | MOSFET N-CH 40V 100A TDSON-8 | ||
| BSC018NE2LSI | Power Field-Effect Transistor, 29A I(D), 25V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC019N02KSGAUMA1 | MOSFET N-CH 20V 100A TDSON-8 | ||
| BSC016N06NSTATMA1 | DIFFERENTIATED MOSFETS | ||
| BSC018N04LSGATMA1 | MOSFET N-CH 40V 100A TDSON-8 | ||
| BSC018NE2LSIATMA1 | MOSFET N-CH 25V 29A TDSON-8 | ||
| BSC018NE2LSATMA1 | MOSFET N-CH 25V 100A TDSON-8 | ||
| BSC019N02KS G | RF Bipolar Transistors MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2 | ||
| BSC018N04LS G | RF Bipolar Transistors MOSFET N-Ch 40V 100A TDSON-8 OptiMOS 3 | ||
| BSC018NE2LS | RF Bipolar Transistors MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | ||
Infineon Technologies |
BSC017N04NSGATMA1 | MOSFET MV POWER MOS | |
| BSC019N02KSGAUMA1 | MOSFET LV POWER MOS | ||
| BSC018N04LSGATMA1 | MOSFET MV POWER MOS | ||
| BSC018NE2LSATMA1 | MOSFET LV POWER MOS | ||
| BSC019N02KSGXT/SAMPLE | Trans MOSFET N-CH 20V 30A 8-Pin TDSON EP - Tape and Reel (Alt: BSC019N02KSGAUMA1) | ||
| BSC016N04LSGS | ブランドニューオリジナル | ||
| BSC016N06NS , TDA3629T , | ブランドニューオリジナル | ||
| BSC016N06NSXT | ブランドニューオリジナル | ||
| BSC018N04LSG-S | ブランドニューオリジナル | ||
| BSC018N04LSGATMA1 , TDA3 | ブランドニューオリジナル | ||
| BSC018NE2LSG | ブランドニューオリジナル | ||
| BSC018NE2LSI BSC018NE2LS | ブランドニューオリジナル | ||
| BSC018NE2LSI QFN8 | ブランドニューオリジナル | ||
| BSC016N04LSG | 100 A, 40 V, 0.0023 ohm, N-CHANNEL, Si, POWER, MOSFET | ||
| BSC017N04NS | ブランドニューオリジナル | ||
| BSC017N04NSG | ブランドニューオリジナル | ||
| BSC018N04LS | ブランドニューオリジナル | ||
| BSC018N04LSG | 30 A, 40 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET | ||
| BSC018NE2L | ブランドニューオリジナル | ||
| BSC019N02KS | ブランドニューオリジナル | ||
| BSC019N02KSG | ブランドニューオリジナル |