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| PartNumber | BSC025N03MS G | BSC025N03MSGATMA1 |
| Description | MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS 3M | MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS 3M |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V |
| Id Continuous Drain Current | 40 A | 40 A |
| Rds On Drain Source Resistance | 6.7 mOhms | 6.7 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V |
| Vgs Gate Source Voltage | 20 V | 20 V |
| Qg Gate Charge | 27 nC | 27 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 35 W | 35 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS |
| Packaging | Reel | Reel |
| Height | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm |
| Series | OptiMOS 3M | OptiMOS 3M |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 28 S | 28 S |
| Fall Time | 2.4 ns | 2.4 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 3 ns | 3 ns |
| Factory Pack Quantity | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 18 ns | 18 ns |
| Typical Turn On Delay Time | 4.3 ns | 4.3 ns |
| Part # Aliases | BSC025N03MSGATMA1 BSC25N3MSGXT SP000311505 | BSC025N03MS BSC25N3MSGXT G SP000311505 |
| Unit Weight | - | 0.021341 oz |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC025N03MS G | MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS 3M | |
| BSC025N03MSGATMA1 | MOSFET N-Ch 30V 100A TSDSON-8 OptiMOS 3M | ||
| BSC025N03MS G | Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP | ||
| BSC025N03MSGATMA1 | MOSFET N-CH 30V 100A TDSON-8 | ||
| BSC025N03MS | 23 A, 30 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET | ||
| BSC025N03MSG | Power Field-Effect Transistor, 23A I(D), 30V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC025N03MSGATMA1 , TDA5 | ブランドニューオリジナル |