BSC047N08NS

BSC047N08NS3 G vs BSC047N08NS3GATMA1

 
PartNumberBSC047N08NS3 GBSC047N08NS3GATMA1
DescriptionMOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
ManufacturerInfineonInfineon
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTDSON-8TDSON-8
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage80 V80 V
Id Continuous Drain Current100 A100 A
Rds On Drain Source Resistance3.9 mOhms3.9 mOhms
Vgs th Gate Source Threshold Voltage2 V2 V
Vgs Gate Source Voltage20 V20 V
Qg Gate Charge69 nC69 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation125 W125 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
TradenameOptiMOSOptiMOS
PackagingReelReel
Height1.27 mm1.27 mm
Length5.9 mm5.9 mm
SeriesOptiMOS 3OptiMOS 3
Transistor Type1 N-Channel1 N-Channel
Width5.15 mm5.15 mm
BrandInfineon TechnologiesInfineon Technologies
Forward Transconductance Min60 S60 S
Fall Time11 ns11 ns
Product TypeMOSFETMOSFET
Rise Time17 ns17 ns
Factory Pack Quantity50005000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time44 ns44 ns
Typical Turn On Delay Time18 ns18 ns
Part # AliasesBSC047N08NS3GATMA1 BSC47N8NS3GXT SP000436372BSC047N08NS3 BSC47N8NS3GXT G SP000436372
Unit Weight0.006349 oz0.004310 oz
メーカー モデル 説明 RFQ
Infineon Technologies
Infineon Technologies
BSC047N08NS3 G MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
BSC047N08NS3GATMA1 MOSFET N-Ch 80V 100A TDSON-8 OptiMOS 3
BSC047N08NS3 G MOSFET, N CHANNEL, 80V, 100A, PG-TSDSON, Transistor Polarity:N Channel, Continuous Drain Current Id:100A, Drain Source Voltage Vds:80V, On Resistance Rds(on):0.0039ohm, Rds(on) Test Voltage Vgs:1
BSC047N08NS3GATMA1 MOSFET N-CH 80V 100A TDSON-8
BSC047N08NS ブランドニューオリジナル
BSC047N08NS3 ブランドニューオリジナル
BSC047N08NS3G Trans MOSFET N-CH 80V 18A 8-Pin TDSON EP (Alt: BSC047N08NS3 G)
BSC047N08NSG ブランドニューオリジナル
BSC047N08NS3GS ブランドニューオリジナル
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