 |  | | |
| PartNumber | BSC050N03LSGATMA1 | BSC050N03LSG | BSC050N03LSG 08 |
| Description | MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3 | Trans MOSFET N-CH 30V 18A 8-Pin TDSON EP | |
| Manufacturer | Infineon | INF | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TDSON-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 80 A | - | - |
| Rds On Drain Source Resistance | 4.2 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 35 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 50 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | - | - |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Series | OptiMOS 3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 38 S | - | - |
| Fall Time | 3.6 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 4 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 21 ns | - | - |
| Typical Turn On Delay Time | 5.2 ns | - | - |
| Part # Aliases | BSC050N03LS BSC5N3LSGXT G SP000269785 | - | - |
| Unit Weight | 0.004194 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC050N03LSGATMA1 | MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3 | |
| BSC050N03LSGXT | MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3 | ||
| BSC050N03LSGATMA1 | MOSFET N-CH 30V 80A TDSON-8 | ||
| BSC050N03LSG | Trans MOSFET N-CH 30V 18A 8-Pin TDSON EP | ||
| BSC050N03LSG 08 | ブランドニューオリジナル | ||
| BSC050N03LSGATMA1 , TDA8 | ブランドニューオリジナル | ||
| BSC050N03LSGXT | Power Field-Effect Transistor, 18A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC050N03LSGATMA1-CUT TAPE | ブランドニューオリジナル |