 | |  | |
| PartNumber | BSC060P03NS3E G | BSC060P03NS3EGATMA1 | BSC060P03NS3EG |
| Description | MOSFET P-Ch -30V -100A TDSON-8 OptiMOS P3 | MOSFET SMALL SIGNAL+P-CH | -30V,-17.7A,P-channel power MOSFET |
| Manufacturer | Infineon | Infineon | INFINEO |
| Product Category | MOSFET | MOSFET | IC Chips |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TDSON-8 | TDSON-8 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 100 A | - | - |
| Rds On Drain Source Resistance | 6 mOhms | - | - |
| Vgs Gate Source Voltage | 25 V | - | - |
| Qg Gate Charge | 61 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 83 W | - | - |
| Configuration | Single | Single | - |
| Tradename | OptiMOS | - | - |
| Packaging | Reel | Reel | - |
| Height | 1.27 mm | 1.27 mm | - |
| Length | 5.9 mm | 5.9 mm | - |
| Series | OptiMOS P3 | - | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Width | 5.15 mm | 5.15 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Fall Time | 34 nS | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 139 nS | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 66 nS | - | - |
| Part # Aliases | BSC060P03NS3EGATMA1 BSC6P3NS3EGXT SP000472984 | BSC060P03NS3E BSC6P3NS3EGXT G SP000472984 | - |
| Unit Weight | 0.003527 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC060P03NS3E G | MOSFET P-Ch -30V -100A TDSON-8 OptiMOS P3 | |
| BSC060P03NS3EGATMA1 | MOSFET P-CH 30V 17.7A TDSON-8 | ||
Infineon Technologies |
BSC060P03NS3EGATMA1 | MOSFET SMALL SIGNAL+P-CH | |
| BSC060P03NS3E G | Trans MOSFET P-CH 30V 17.7A 8-Pin TDSON EP | ||
| BSC060P03NS3EG | -30V,-17.7A,P-channel power MOSFET |