BSC079N03LSC

BSC079N03LSC G vs BSC079N03LSC vs BSC079N03LSCG

 
PartNumberBSC079N03LSC GBSC079N03LSCBSC079N03LSCG
DescriptionMOSFET N-Ch 30V 14A TDSON-8MOSFET, N-CH, 30V, 50A, TDSON
ManufacturerInfineonInfineon TechnologiesINFINEON
Product CategoryMOSFETTransistors - FETs, MOSFETs - SingleIC Chips
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseTDSON-8--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current14 A--
Rds On Drain Source Resistance7.9 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation2.5 W--
ConfigurationSingleSingle Quad Drain Triple Source-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
Height1.27 mm--
Length5.9 mm--
SeriesBSC079N03BSC079N03-
Transistor Type1 N-Channel1 N-Channel-
Width5.15 mm--
BrandInfineon Technologies--
Fall Time2.4 ns2.4 ns-
Product TypeMOSFET--
Rise Time2.4 ns2.4 ns-
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time14 ns14 ns-
Typical Turn On Delay Time3 ns3 ns-
Part # AliasesBSC079N03LSCGATMA1 BSC79N3LSCGXT SP000527424--
Part Aliases-BSC079N03LSCGATMA1 BSC079N03LSCGXT SP000527424-
Package Case-TDSON-8-
Pd Power Dissipation-2.5 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-14 A-
Vds Drain Source Breakdown Voltage-30 V-
Rds On Drain Source Resistance-7.9 mOhms-
メーカー モデル 説明 RFQ
Infineon Technologies
Infineon Technologies
BSC079N03LSC G MOSFET N-Ch 30V 14A TDSON-8
BSC079N03LSCGATMA1 MOSFET N-CH 30V 14A 8TDSON
Infineon Technologies
Infineon Technologies
BSC079N03LSCGATMA1 MOSFET LV POWER MOS
BSC079N03LSCGXT Trans MOSFET N-CH 30V 14A 8-Pin TDSON EP - Tape and Reel (Alt: BSC079N03LSCGATMA1)
BSC079N03LSC ブランドニューオリジナル
BSC079N03LSCG MOSFET, N-CH, 30V, 50A, TDSON
BSC079N03LSC G RF Bipolar Transistors MOSFET N-Ch 30V 14A TDSON-8
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