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| PartNumber | BSC080P03LS G | BSC080P03LS | BSC080P03LSGAUMA1 |
| Description | MOSFET P-Ch -30V 16A TDSON-8 OptiMOS P | Power Field-Effect Transistor, 16A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | MOSFET P-CH 30V 30A TDSON-8 |
| Manufacturer | Infineon | INFINEON | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TDSON-8 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 16 A | - | - |
| Rds On Drain Source Resistance | 8 mOhms | - | - |
| Vgs Gate Source Voltage | 25 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 2.5 W | - | - |
| Configuration | Single | Single Quad Drain Triple Source | - |
| Channel Mode | Enhancement | Enhancement | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Series | OptiMOS P | OptiMOS P | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | - |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Fall Time | 108 ns | 108 ns | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 87 ns | 87 ns | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 79 ns | 79 ns | - |
| Typical Turn On Delay Time | 13.5 ns | 13.5 ns | - |
| Part # Aliases | BSC080P03LSGAUMA1 BSC8P3LSGXT SP000359664 | - | - |
| Part Aliases | - | BSC080P03LSGAUMA1 BSC080P03LSGXT SP000359664 | - |
| Package Case | - | TDSON-8 | - |
| Pd Power Dissipation | - | 2.5 W | - |
| Vgs Gate Source Voltage | - | 25 V | - |
| Id Continuous Drain Current | - | 16 A | - |
| Vds Drain Source Breakdown Voltage | - | - 30 V | - |
| Rds On Drain Source Resistance | - | 8 mOhms | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC080P03LS G | MOSFET P-Ch -30V 16A TDSON-8 OptiMOS P | |
| BSC080P03LS G | MOSFET P-Ch -30V 16A TDSON-8 OptiMOS P | ||
| BSC080P03LSGAUMA1 | MOSFET P-CH 30V 30A TDSON-8 | ||
| BSC080P03LS | Power Field-Effect Transistor, 16A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC080P03LSG | Trans MOSFET P-CH 30V 16A 8-Pin TDSON T/R (Alt: BSC080P03LS G) | ||
| BSC080P03LSGAUMA1 , TDK5 | ブランドニューオリジナル |