 | | | |
| PartNumber | BSC123N08NS3GATMA1 | BSC123N10LS G | BSC123N10LSGATMA1 |
| Description | MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3 | MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2 | MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | PG-TDSON-8 | TDSON-8 | TDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 80 V | 100 V | 100 V |
| Id Continuous Drain Current | 55 A | 71 A | 71 A |
| Rds On Drain Source Resistance | 12.3 mOhms | 10 mOhms | 10 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 1.2 V | 1.2 V |
| Vgs Gate Source Voltage | 10 V | 20 V | 20 V |
| Qg Gate Charge | 19 nC | 68 nC | 68 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 66 W | 114 W | 114 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.27 mm | 1.27 mm | 1.27 mm |
| Length | 5.9 mm | 5.9 mm | 5.9 mm |
| Series | OptiMOS 3 | OptiMOS 2 | OptiMOS 2 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 5.15 mm | 5.15 mm | 5.15 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 22 S | 49 S | 49 S |
| Development Kit | EVAL_1K4W_ZVS_FB_CFD7 | - | - |
| Fall Time | 4 ns | 7 ns | 7 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 18 ns | 25 ns | 25 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 19 ns | 41 ns | 41 ns |
| Typical Turn On Delay Time | 12 ns | 18 ns | 18 ns |
| Part # Aliases | BSC123N08NS3 BSC123N8NS3GXT G SP000443916 | BSC123N10LSGATMA1 BSC123N1LSGXT SP000379612 | BSC123N10LS BSC123N1LSGXT G SP000379612 |
| Unit Weight | 0.006067 oz | - | 0.005855 oz |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC160N10NS3GATMA1 | MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3 | |
| BSC123N08NS3GATMA1 | MOSFET N-Ch 80V 55A TDSON-8 OptiMOS 3 | ||
| BSC150N03LD G | MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3 | ||
| BSC150N03LDGATMA1 | MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3 | ||
| BSC123N10LS G | MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2 | ||
| BSC123N10LSGATMA1 | MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2 | ||
| BSC160N10NS3 G | MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3 | ||
| BSC12DN20NS3 G | MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 | ||
| BSC12DN20NS3G | MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 | ||
| BSC130P03LS G | MOSFET P-Ch -30V -22.5A TDSON-8 OptiMOS P | ||
| BSC159N10LSF G | MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 2 | ||
| BSC155N06NDATMA1 | MOSFET TRENCH 40<-<100V | ||
| BSC12DN20NS3 G | MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 | ||
| BSC123N08NS3GATMA1 | MOSFET N-CH 80V 55A TDSON-8 | ||
| BSC13DN30NSFDATMA1 | MOSFET N-CH 300V 16A 8TDSON | ||
| BSC150N03LD G | Trans MOSFET N-CH 30V 8A 8-Pin TDSON T/R (Alt: BSC150N03LD G) | ||
| BSC150N03LDGATMA1 | MOSFET 2N-CH 30V 8A 8TDSON | ||
| BSC152N10NSFGATMA1 | MOSFET N-CH 100V 63A TDSON-8 | ||
| BSC160N10NS3 G | MOSFET N-Ch 100V 42A TDSON-8 OptiMOS 3 | ||
| BSC12DN20NS3GATMA1 | MOSFET N-CH 200V 11.3A 8TDSON | ||
| BSC130P03LSGAUMA1 | MOSFET P-CH 30V 22.5A TDSON-8 | ||
| BSC159N10LSFGATMA1 | MOSFET N-CH 100V 63A TDSON-8 | ||
| BSC123N10LSGATMA1 | MOSFET N-CH 100V 71A TDSON-8 | ||
| BSC130P03LS G | IGBT Transistors MOSFET P-Ch -30V -22.5A TDSON-8 OptiMOS P | ||
| BSC159N10LSF G | MOSFET N-Ch 100V 63A TDSON-8 OptiMOS 2 | ||
| BSC123N10LS G | RF Bipolar Transistors MOSFET N-Ch 100V 71A TDSON-8 OptiMOS 2 | ||
| BSC12DN20NS3G | RF Bipolar Transistors MOSFET N-Ch 200V 11.3A TDSON-8 OptiMOS 3 | ||
Infineon Technologies |
BSC130P03LSGAUMA1 | MOSFET SMALL SIGNAL+P-CH | |
| BSC123N08NS3GXT | Trans MOSFET N-CH 80V 11A 8-Pin TDSON EP - Tape and Reel (Alt: BSC123N08NS3GATMA1) | ||
| BSC12DN20NS3GXT | Trans MOSFET N-CH 200V 11.3A 8-Pin TDSON EP - Tape and Reel (Alt: BSC12DN20NS3GATMA1) | ||
| BSC123N08NS3GATMA1 , TDZ | ブランドニューオリジナル | ||
| BSC123N10LS G | ブランドニューオリジナル | ||
| BSC123N10LSGATMA1 , TDZ7 | ブランドニューオリジナル | ||
| BSC130N03M | ブランドニューオリジナル | ||
| BSC130P03LSG | Trans MOSFET P-CH 30V 12A 8-Pin TDSON T/R (Alt: BSC130P03LS G) | ||
| BSC130P03LSGAUMA1 , TDZF | ブランドニューオリジナル | ||
| BSC150N03LD G 30V,20A, | ブランドニューオリジナル | ||
| BSC150N03LD G 30V20A | ブランドニューオリジナル | ||
| BSC150N03LDG PB-FREE | ブランドニューオリジナル | ||
| BSC152N10NSF G | MOSFET N-Ch 100V 9.4A TDSON-8 | ||
| BSC159N10LSF | ブランドニューオリジナル | ||
| BSC159N10LSFG | ブランドニューオリジナル | ||
| BSC123N08NS3G | Trans MOSFET N-CH 80V 11A 8-Pin TDSON (Alt: BSC123N08NS3 G) | ||
| BSC123N10LS | ブランドニューオリジナル | ||
| BSC123N10LSG | Trans MOSFET N-CH 100V 10.6A 8-Pin TDSON EP | ||
| BSC150N03LDG | Power Field-Effect Transistor, 8A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC160N10NS | ブランドニューオリジナル | ||
| BSC160N10NS3G | Trans MOSFET N-CH 100V 8.8A 8-Pin TDSON T/R (Alt: BSC160N10NS3 G) | ||
| BSC150N03LD | MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3 | ||
| BSC152N10NSFG | Power Field-Effect Transistor, 9.4A I(D), 100V, 0.0152ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |