BSC110N1

BSC110N15NS5ATMA1 vs BSC110N15NS5 vs BSC110N15NS53

 
PartNumberBSC110N15NS5ATMA1BSC110N15NS5BSC110N15NS53
DescriptionMOSFET MV POWER MOS
ManufacturerInfineonInfineon Technologies-
Product CategoryMOSFETTransistors - FETs, MOSFETs - Single-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMT--
Package / CasePG-TDSON-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage150 V--
Id Continuous Drain Current76 A--
Rds On Drain Source Resistance11 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge28 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation125 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReelReel-
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 5--
Transistor Type1 N-Channel--
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min29 S--
Fall Time2.9 ns--
Product TypeMOSFET--
Rise Time3.3 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time14.5 ns--
Typical Turn On Delay Time10.3 ns--
Part # AliasesBSC110N15NS5 SP001181418--
Unit Weight0.007041 oz--
Part Aliases-BSC110N15NS5 SP001181418-
Package Case-TDSON-8-
メーカー モデル 説明 RFQ
Infineon Technologies
Infineon Technologies
BSC110N15NS5ATMA1 MOSFET MV POWER MOS
BSC110N15NS5ATMA1 MOSFET N-CH 150V 76A 8TDSON
BSC110N15NS5 ブランドニューオリジナル
BSC110N15NS53 ブランドニューオリジナル
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