BSC265N

BSC265N10LSF G vs BSC265N01LSG vs BSC265N10LSF

 
PartNumberBSC265N10LSF GBSC265N01LSGBSC265N10LSF
DescriptionMOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2
ManufacturerInfineon-INFINEON
Product CategoryMOSFET-FETs - Single
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTDSON-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current40 A--
Rds On Drain Source Resistance20 mOhms--
Vgs th Gate Source Threshold Voltage1.2 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge21 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation78 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReel--
Height1.27 mm--
Length5.9 mm--
SeriesOptiMOS 2--
Transistor Type1 N-Channel--
Width5.15 mm--
BrandInfineon Technologies--
Forward Transconductance Min21 S--
Fall Time4 ns--
Product TypeMOSFET--
Rise Time24 ns--
Factory Pack Quantity5000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns--
Typical Turn On Delay Time10 ns--
Part # AliasesBSC265N10LSFGATMA1 BSC265N1LSFGXT SP000379618--
Unit Weight0.003527 oz--
メーカー モデル 説明 RFQ
Infineon Technologies
Infineon Technologies
BSC265N10LSF G MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2
BSC265N10LSFGATMA1 MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2
BSC265N10LSFGATMA1 MOSFET N-CH 100V 40A TDSON-8
BSC265N01LSG ブランドニューオリジナル
BSC265N10LSF ブランドニューオリジナル
BSC265N10LSFG Trans MOSFET N-CH 100V 6.5A 8-Pin TDSON T/R (Alt: BSC265N10LSF G)
BSC265N10LSF G IGBT Transistors MOSFET N-Ch 100V 40A TDSON-8 OptiMOS 2
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