 |  | | |
| PartNumber | BSC886N03LSGATMA1 | BSC886N03LSG | BSC886N03LSG E8178 |
| Description | MOSFET LV POWER MOS | Power Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Manufacturer | Infineon | INFINEON | INFINEON |
| Product Category | MOSFET | FETs - Single | IC Chips |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TDSON-8 | - | - |
| Packaging | Reel | - | - |
| Height | 1.27 mm | - | - |
| Length | 5.9 mm | - | - |
| Width | 5.15 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Product Type | MOSFET | - | - |
| Subcategory | MOSFETs | - | - |
| Part # Aliases | BSC886N03LS BSC886N3LSGXT G SP000475950 | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSC886N03LSGATMA1 | MOSFET LV POWER MOS | |
| BSC886N03LSG | Power Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSC886N03LSG E8178 | ブランドニューオリジナル | ||
| BSC886N03LSGATMA1 , TDZF | ブランドニューオリジナル | ||
Infineon Technologies |
BSC886N03LSGATMA1 | MOSFET N-CH 30V 65A TDSON-8 |