 |  | | |
| PartNumber | BSL207NL6327 | BSL207NL6327HTSA1 | BSL207NL6327HTSA1426 |
| Description | Small Signal Field-Effect Transistor, 2.1A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | MOSFET 2N-CH 20V 2.1A 6TSOP | |
| Manufacturer | Infineon Technologies | Infineon Technologies | - |
| Product Category | FETs - Arrays | FETs - Arrays | - |
| Series | OptiMOS | OptiMOS | - |
| Packaging | Digi-ReelR | Digi-ReelR | - |
| Package Case | SC-74, SOT-457 | SC-74, SOT-457 | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
| Mounting Type | Surface Mount | Surface Mount | - |
| Supplier Device Package | PG-TSOP6-6 | PG-TSOP6-6 | - |
| FET Type | 2 N-Channel (Dual) | 2 N-Channel (Dual) | - |
| Power Max | 500mW | 500mW | - |
| Drain to Source Voltage Vdss | 20V | 20V | - |
| Input Capacitance Ciss Vds | 419pF @ 10V | 419pF @ 10V | - |
| FET Feature | Logic Level Gate | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | 2.1A | 2.1A | - |
| Rds On Max Id Vgs | 70 mOhm @ 2.1A, 4.5V | 70 mOhm @ 2.1A, 4.5V | - |
| Vgs th Max Id | 1.2V @ 11μA | 1.2V @ 11μA | - |
| Gate Charge Qg Vgs | 2.1nC @ 4.5V | 2.1nC @ 4.5V | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
| BSL207NL6327 | Small Signal Field-Effect Transistor, 2.1A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSL207NL6327HTSA1426 | ブランドニューオリジナル | ||
Infineon Technologies |
BSL207NL6327HTSA1 | MOSFET 2N-CH 20V 2.1A 6TSOP |