 |  | |
| PartNumber | BSL215CH6327XTSA1 | BSL215CH6327 |
| Description | MOSFET SMALL SIGNAL+P-CH | |
| Manufacturer | Infineon | - |
| Product Category | MOSFET | - |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | TSOP-6 | - |
| Number of Channels | 2 Channel | - |
| Transistor Polarity | N-Channel, P-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - |
| Id Continuous Drain Current | 1.5 A | - |
| Rds On Drain Source Resistance | 140 mOhms, 150 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 700 mV, 1.2 V | - |
| Vgs Gate Source Voltage | 4.5 V | - |
| Qg Gate Charge | 0.73 nC, - 3 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 500 mW (1/2 W) | - |
| Configuration | Dual | - |
| Channel Mode | Enhancement | - |
| Packaging | Reel | - |
| Height | 1.1 mm | - |
| Length | 3 mm | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | - |
| Width | 1.5 mm | - |
| Brand | Infineon Technologies | - |
| Fall Time | 1.4 ns, 14 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 7.6 ns, 9.7 ns | - |
| Factory Pack Quantity | 3000 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 6.8 ns, 14.5 ns | - |
| Typical Turn On Delay Time | 4.1 ns, 6.7 ns | - |
| Part # Aliases | BSL215C H6327 SP001101000 | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSL215CH6327XTSA1 | MOSFET SMALL SIGNAL+P-CH | |
| BSL215CH6327XTSA1 | IGBT Transistors MOSFET SMALL SIGNAL+P-CH | ||
| BSL215CH6327 | ブランドニューオリジナル |