 | |  | |
| PartNumber | BSL316C H6327 | BSL314PEH6327XTSA1 | BSL314PEL6327HTSA1 |
| Description | MOSFET SMALL SIGNAL+P-CH | MOSFET SMALL SIGNAL+P-CH | MOSFET 2P-CH 30V 1.5A 6TSOP |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TSOP-6 | TSOP-6 | - |
| Number of Channels | 2 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel, P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 1.4 A, 1.5 A | 1.5 A | - |
| Rds On Drain Source Resistance | 119 mOhms, 113 mOhms | 230 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V, 2 V | 2 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 600 pC, - 2.4 nC | - 700 pC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 500 mW (1/2 W) | 500 mW | - |
| Configuration | Dual | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Height | 1.1 mm | 1.1 mm | - |
| Length | 3 mm | 3 mm | - |
| Series | BSL316 | - | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | 2 P-Channel | - |
| Width | 1.5 mm | 1.5 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Forward Transconductance Min | 2.3 S, 2.7 S | 3 S | - |
| Fall Time | 1 ns, 7.5 ns | 2.8 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 2.3 ns, 6.5 ns | 3.9 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 5.8 ns, 14.3 ns | 12.4 ns | - |
| Typical Turn On Delay Time | 3.4 ns, 5 ns | 5.1 ns | - |
| Part # Aliases | BSL316CH6327XTSA1 SP001101010 | BSL314PE H6327 SP001101006 | - |
| Unit Weight | 0.000522 oz | 0.000522 oz | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSL316C H6327 | MOSFET SMALL SIGNAL+P-CH | |
| BSL316CH6327XTSA1 | MOSFET SMALL SIGNAL+P-CH | ||
| BSL314PEH6327XTSA1 | MOSFET SMALL SIGNAL+P-CH | ||
| BSL314PEL6327HTSA1 | MOSFET 2P-CH 30V 1.5A 6TSOP | ||
| BSL316CH6327XTSA1 | MOSFET N/P-CH 30V 1.4A/1.5A TSOP | ||
| BSL316CL6327HTSA1 | MOSFET N/P-CH 30V TSOP-6 | ||
| BSL314PEH6327XTSA1 | IGBT Transistors MOSFET SMALL SIGNAL+P-CH | ||
| BSL314PE | ブランドニューオリジナル | ||
| BSL314PE L6327 | MOSFET P-Ch -30V 1.5A TSOP-6 | ||
| BSL314PEH6327 | ブランドニューオリジナル | ||
| BSL314PEL6327 | ブランドニューオリジナル | ||
| BSL314PEL6327XT | -1.5A,-30V,Dual P-channel power MOSFET | ||
| BSL315P | ブランドニューオリジナル | ||
| BSL315P L6327 | MOSFET P-Ch -30V 1.5A TSOP-6 | ||
| BSL315P6327 | ブランドニューオリジナル | ||
| BSL315PL6327 | ブランドニューオリジナル | ||
| BSL316C | ブランドニューオリジナル | ||
| BSL316C (SPJ) | ブランドニューオリジナル | ||
| BSL316C H6327 | MOSFET SMALL SIGNAL+P-CH | ||
| BSL316C L6327 | MOSFET N and P-Ch 30V 1.4A TSOP-6 | ||
| BSL316CL6327 | Small Signal Field-Effect Transistor, 1.4A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSL316CH6327XTSA1-CUT TAPE | ブランドニューオリジナル |