BSM200GB

BSM200GB120DN2 vs BSM200GB120DLC vs BSM200GB120DLCHOSA1

 
PartNumberBSM200GB120DN2BSM200GB120DLCBSM200GB120DLCHOSA1
DescriptionIGBT Modules 1200V 200A DUALIGBT Modules 1200V 200A DUALIGBT 2 MED POWER 62MM-1
ManufacturerInfineonInfineon-
Product CategoryIGBT ModulesIGBT Modules-
RoHSYN-
ProductIGBT Silicon ModulesIGBT Silicon Modules-
ConfigurationHalf BridgeDual-
Collector Emitter Voltage VCEO Max1200 V1200 V-
Collector Emitter Saturation Voltage2.5 V2.1 V-
Continuous Collector Current at 25 C290 A420 A-
Gate Emitter Leakage Current400 nA400 nA-
Pd Power Dissipation1.4 kW1550 W-
Package / CaseHalf Bridge262 mm-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 125 C-
PackagingTrayTray-
Height30 mm30.5 mm-
Length106.4 mm106.4 mm-
Width61.4 mm61.4 mm-
BrandInfineon TechnologiesInfineon Technologies-
Mounting StyleChassis MountChassis Mount-
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity1010-
SubcategoryIGBTsIGBTs-
Part # AliasesBSM200GB120DN2HOSA1 SP000014913BSM200GB120DLCHOSA1 SP000100715-
メーカー モデル 説明 RFQ
Infineon Technologies
Infineon Technologies
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