 |  | | |
| PartNumber | BSM25GD120DN2E3224 | BSM25GD120DN2E | BSM25GD120DN2E224 |
| Description | IGBT Modules N-CH 1.2KV 35A | ||
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Modules | - | - |
| RoHS | Y | - | - |
| Product | IGBT Silicon Modules | - | - |
| Configuration | Hex | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 2.5 V | - | - |
| Continuous Collector Current at 25 C | 35 A | - | - |
| Gate Emitter Leakage Current | 180 nA | - | - |
| Pd Power Dissipation | 200 W | - | - |
| Package / Case | EconoPACK 2 | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Packaging | Tray | - | - |
| Height | 17 mm | - | - |
| Length | 107.5 mm | - | - |
| Width | 45 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Mounting Style | Chassis Mount | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 10 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | BSM25GD120DN2E3224BOSA1 SP000100361 | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSM25GD120DN2E3224 | IGBT Modules N-CH 1.2KV 35A | |
| BSM25GD120DN2E3224BOSA1 | IGBT 2 LOW POWER ECONO2-2 | ||
| BSM25GD120DN2E | ブランドニューオリジナル | ||
| BSM25GD120DN2E224 | ブランドニューオリジナル | ||
| BSM25GD120DN2E3224 | IGBT Modules N-CH 1.2KV 35A |