BSM50GB

BSM50GB120DLC vs BSM50GB120DN2 vs BSM50GB120DLCHOSA1

 
PartNumberBSM50GB120DLCBSM50GB120DN2BSM50GB120DLCHOSA1
DescriptionIGBT Modules 1200V 50A DUALIGBT Modules 1200V 50A DUALIGBT 2 MED POWER 34MM-1
ManufacturerInfineonInfineon-
Product CategoryIGBT ModulesIGBT Modules-
RoHSNY-
ProductIGBT Silicon ModulesIGBT Silicon Modules-
ConfigurationDualHalf Bridge-
Collector Emitter Voltage VCEO Max1200 V1200 V-
Collector Emitter Saturation Voltage2.4 V2.5 V-
Continuous Collector Current at 25 C115 A78 A-
Gate Emitter Leakage Current400 nA200 nA-
Pd Power Dissipation460 W400 W-
Package / Case32 mmHalf Bridge1-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 125 C+ 150 C-
PackagingTrayTray-
Height30.5 mm30.5 mm-
Length94 mm94 mm-
Width34 mm34 mm-
BrandInfineon TechnologiesInfineon Technologies-
Mounting StyleChassis MountChassis Mount-
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT Modules-
Factory Pack Quantity1010-
SubcategoryIGBTsIGBTs-
Part # AliasesBSM50GB120DLCHOSA1 SP000100474BSM50GB120DN2HOSA1 SP000095922-
Unit Weight6.349313 oz--
メーカー モデル 説明 RFQ
Infineon Technologies
Infineon Technologies
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BSM50GB120DN1 ブランドニューオリジナル
BSM50GB120N2 Insulated Gate Bipolar Transistor, 78A I(C), 1200V V(BR)CES, N-Channel
BSM50GB121D ブランドニューオリジナル
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