BSM75GA

BSM75GAL120DN2 vs BSM75GAR120DN2 vs BSM75GAL120DN2HOSA1

 
PartNumberBSM75GAL120DN2BSM75GAR120DN2BSM75GAL120DN2HOSA1
DescriptionIGBT Modules 1200V 75A CHOPPERIGBT Transistors 1200V 100A GAR CHMEDIUM POWER 34MM
ManufacturerInfineonInfineon-
Product CategoryIGBT ModulesIGBT Transistors-
RoHSYY-
ProductIGBT Silicon Modules--
ConfigurationHalf BridgeSingle-
Collector Emitter Voltage VCEO Max1200 V1200 V-
Collector Emitter Saturation Voltage2.5 V2.5 V-
Continuous Collector Current at 25 C105 A100 A-
Gate Emitter Leakage Current400 nA400 nA-
Pd Power Dissipation625 W625 W-
Package / CaseHalf Bridge GAL 1IS4 (34 mm )-5-
Minimum Operating Temperature- 40 C- 40 C-
Maximum Operating Temperature+ 150 C+ 150 C-
PackagingTrayTray-
Height30.5 mm30.5 mm-
Length94 mm94 mm-
Width34 mm34 mm-
BrandInfineon TechnologiesInfineon Technologies-
Mounting StyleChassis MountChassis Mount-
Maximum Gate Emitter Voltage20 V20 V-
Product TypeIGBT ModulesIGBT Transistors-
Factory Pack Quantity1010-
SubcategoryIGBTsIGBTs-
Part # AliasesBSM75GAL120DN2HOSA1 SP000106455BSM75GAR120DN2HOSA1 SP000100462-
Technology-Si-
Continuous Collector Current-105 A-
Unit Weight-5.436423 oz-
メーカー モデル 説明 RFQ
Infineon Technologies
Infineon Technologies
BSM75GAL120DN2 IGBT Modules 1200V 75A CHOPPER
BSM75GAR120DN2 IGBT Transistors 1200V 100A GAR CH
BSM75GAL120DN2HOSA1 MEDIUM POWER 34MM
BSM75GAR120DN2HOSA1 IGBT 2 MED POWER 34MM-1
BSM75GAL100D ブランドニューオリジナル
BSM75GAL120D ブランドニューオリジナル
BSM75GAL60DLC ブランドニューオリジナル
BSM75GAR120D ブランドニューオリジナル
BSM75GAR170DN2 ブランドニューオリジナル
BSM75GAL120DN2 IGBT Modules 1200V 75A CHOPPER
BSM75GAR120DN2 IGBT Transistors 1200V 100A GAR CH
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