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| PartNumber | BSM75GAL120DN2 | BSM75GAR120DN2 | BSM75GAL120DN2HOSA1 |
| Description | IGBT Modules 1200V 75A CHOPPER | IGBT Transistors 1200V 100A GAR CH | MEDIUM POWER 34MM |
| Manufacturer | Infineon | Infineon | - |
| Product Category | IGBT Modules | IGBT Transistors | - |
| RoHS | Y | Y | - |
| Product | IGBT Silicon Modules | - | - |
| Configuration | Half Bridge | Single | - |
| Collector Emitter Voltage VCEO Max | 1200 V | 1200 V | - |
| Collector Emitter Saturation Voltage | 2.5 V | 2.5 V | - |
| Continuous Collector Current at 25 C | 105 A | 100 A | - |
| Gate Emitter Leakage Current | 400 nA | 400 nA | - |
| Pd Power Dissipation | 625 W | 625 W | - |
| Package / Case | Half Bridge GAL 1 | IS4 (34 mm )-5 | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Packaging | Tray | Tray | - |
| Height | 30.5 mm | 30.5 mm | - |
| Length | 94 mm | 94 mm | - |
| Width | 34 mm | 34 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Mounting Style | Chassis Mount | Chassis Mount | - |
| Maximum Gate Emitter Voltage | 20 V | 20 V | - |
| Product Type | IGBT Modules | IGBT Transistors | - |
| Factory Pack Quantity | 10 | 10 | - |
| Subcategory | IGBTs | IGBTs | - |
| Part # Aliases | BSM75GAL120DN2HOSA1 SP000106455 | BSM75GAR120DN2HOSA1 SP000100462 | - |
| Technology | - | Si | - |
| Continuous Collector Current | - | 105 A | - |
| Unit Weight | - | 5.436423 oz | - |