BSO080P03S

BSO080P03S H vs BSO080P03SHXUMA1 vs BSO080P03SNTMA1

 
PartNumberBSO080P03S HBSO080P03SHXUMA1BSO080P03SNTMA1
DescriptionMOSFET P-Ch -30V -14.9A DSO-8 OptiMOS PMOSFET SMALL SIGNAL+P-CHMOSFET P-CH 30V 12.6A 8DSO
ManufacturerInfineonInfineon-
Product CategoryMOSFETMOSFET-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8SO-8-
Number of Channels1 Channel1 Channel-
Transistor PolarityP-ChannelP-Channel-
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current14.9 A--
Rds On Drain Source Resistance8 mOhms--
Vgs Gate Source Voltage25 V--
Qg Gate Charge- 102 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingleSingle-
Channel ModeEnhancement--
TradenameOptiMOS--
PackagingReelReel-
Height1.75 mm1.75 mm-
Length4.9 mm4.9 mm-
SeriesOptiMOS P--
Transistor Type1 P-Channel1 P-Channel-
Width3.9 mm3.9 mm-
BrandInfineon TechnologiesInfineon Technologies-
Forward Transconductance Min43 S--
Fall Time110 ns--
Moisture SensitiveYes--
Product TypeMOSFETMOSFET-
Rise Time22 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time130 ns--
Typical Turn On Delay Time15 ns--
Part # AliasesBSO080P03SHXUMA1 BSO8P3SHXT SP000613798BSO080P03S BSO8P3SHXT H SP000613798-
Unit Weight0.019048 oz0.019048 oz-
メーカー モデル 説明 RFQ
Infineon Technologies
Infineon Technologies
BSO080P03S H MOSFET P-Ch -30V -14.9A DSO-8 OptiMOS P
BSO080P03SNTMA1 MOSFET P-CH 30V 12.6A 8DSO
BSO080P03SHXUMA1 MOSFET P-CH 30V 12.6A 8DSO
Infineon Technologies
Infineon Technologies
BSO080P03SHXUMA1 MOSFET SMALL SIGNAL+P-CH
BSO080P03S,080P3S ブランドニューオリジナル
BSO080P03SH -30V,8m��,-14.9A P-ch Power MOSFET
BSO080P03S H Darlington Transistors MOSFET P-Ch -30V -14.9A DSO-8 OptiMOS P
Top