 |  | | |
| PartNumber | BSO615NGHUMA1 | BSO615NG | BSO615NGHUMA1-CUT TAPE |
| Description | MOSFET N-Ch 60V 2.6A SO-8 | ||
| Manufacturer | Infineon | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 2.6 A | - | - |
| Rds On Drain Source Resistance | 120 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 20 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 2 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | SIPMOS | - | - |
| Packaging | Reel | - | - |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Width | 3.9 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Forward Transconductance Min | 2.4 S | - | - |
| Fall Time | 15 ns | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 15 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 20 ns | - | - |
| Typical Turn On Delay Time | 12 ns | - | - |
| Part # Aliases | BSO615N BSO615NGXT G SP000216316 | - | - |
| Unit Weight | 0.019048 oz | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSO615NGHUMA1 | MOSFET N-Ch 60V 2.6A SO-8 | |
| BSO615NGHUMA1 | MOSFET 2N-CH 60V 2.6A 8SOIC | ||
| BSO615NG | ブランドニューオリジナル | ||
| BSO615NGHUMA1-CUT TAPE | ブランドニューオリジナル |