 |  | | |
| PartNumber | BSP125L6327 | BSP125L6327HTSA1 | BSP125L6433 |
| Description | Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | MOSFET N-CH 600V 120MA SOT-223 | Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| Manufacturer | INFINEON | - | - |
| Product Category | FETs - Single | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
| BSP125L6327 | Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BSP125L6433 | Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
Infineon Technologies |
BSP125L6327HTSA1 | MOSFET N-CH 600V 120MA SOT-223 | |
| BSP125L6433HTMA1 | MOSFET N-CH 600V 120MA SOT-223 | ||
| BSP125L6327XT | ブランドニューオリジナル |