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| PartNumber | BSP613PH6327XTSA1 | BSP613PH6327 |
| Description | MOSFET P-Ch -60V -2.9A SOT-223-3 | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
| Manufacturer | Infineon | - |
| Product Category | MOSFET | - |
| RoHS | Y | - |
| Technology | Si | - |
| Mounting Style | SMD/SMT | - |
| Package / Case | PG-SOT-223-4 | - |
| Number of Channels | 1 Channel | - |
| Transistor Polarity | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | - |
| Id Continuous Drain Current | 2.9 A | - |
| Rds On Drain Source Resistance | 130 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 2.1 V | - |
| Vgs Gate Source Voltage | 10 V | - |
| Qg Gate Charge | 22 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 1.8 W | - |
| Configuration | Single | - |
| Channel Mode | Enhancement | - |
| Packaging | Reel | - |
| Height | 1.6 mm | - |
| Length | 6.5 mm | - |
| Series | BSP613 | - |
| Transistor Type | 1 P-Channel | - |
| Width | 3.5 mm | - |
| Brand | Infineon Technologies | - |
| Forward Transconductance Min | 2.7 S | - |
| Fall Time | 7 ns | - |
| Product Type | MOSFET | - |
| Rise Time | 9 ns | - |
| Factory Pack Quantity | 1000 | - |
| Subcategory | MOSFETs | - |
| Typical Turn Off Delay Time | 26 ns | - |
| Typical Turn On Delay Time | 6.7 ns | - |
| Part # Aliases | BSP613P H6327 SP001058788 | - |
| Unit Weight | 0.003951 oz | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSP613PH6327XTSA1 | MOSFET P-Ch -60V -2.9A SOT-223-3 | |
| BSP613PH6327XTSA1 | MOSFET P-CH 60V 2.9A SOT-223 | ||
| BSP613PH6327 | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |