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| PartNumber | BSS214NH6327XTSA1 | BSS214NH6327XT |
| Description | MOSFET N-Ch 20V 1.5A SOT-23-3 | MOSFET N-Ch 20V 1.5A SOT-23-3 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | PG-SOT-23-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 20 V | 20 V |
| Id Continuous Drain Current | 1.5 A | 1.5 A |
| Rds On Drain Source Resistance | 106 mOhms | 140 mOhms |
| Vgs th Gate Source Threshold Voltage | 700 mV | 700 mV |
| Vgs Gate Source Voltage | 12 V | 4.5 V |
| Qg Gate Charge | 800 pC | 800 pC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 500 mW (1/2 W) | 500 mW (1/2 W) |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 |
| Packaging | Reel | Reel |
| Height | 1.1 mm | 1.1 mm |
| Length | 2.9 mm | 2.9 mm |
| Series | BSS214 | BSS214 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 1.3 mm | 1.3 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 4 S | 4 S |
| Fall Time | 1.4 ns | 1.4 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 7.8 ns | 7.8 ns |
| Factory Pack Quantity | 3000 | 3000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 6.8 ns | 6.8 ns |
| Typical Turn On Delay Time | 4.1 ns | 4.1 ns |
| Part # Aliases | BSS214N BSS214NH6327XT H6327 SP000928936 | BSS214N BSS214NH6327XTSA1 H6327 SP000928936 |
| Unit Weight | 0.000282 oz | 0.000282 oz |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSS214NH6327XTSA1 | MOSFET N-Ch 20V 1.5A SOT-23-3 | |
| BSS214NH6327XT | MOSFET N-Ch 20V 1.5A SOT-23-3 | ||
| BSS214NH6327XTSA1 | MOSFET N-CH 20V 1.5A SOT23 |