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| PartNumber | BSS606NH6327XTSA1 | BSS606N H6327 |
| Description | MOSFET N-Ch 60V 3.2A SOT-89-3 | MOSFET N-Ch 60V 2.3A SOT-89-3 |
| Manufacturer | Infineon | Infineon |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | PG-SOT-89-3 | SOT-89-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | - |
| Id Continuous Drain Current | 3.2 A | - |
| Rds On Drain Source Resistance | 60 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1.3 V | - |
| Vgs Gate Source Voltage | 10 V | - |
| Qg Gate Charge | 3.7 nC | - |
| Minimum Operating Temperature | - 55 C | - |
| Maximum Operating Temperature | + 150 C | - |
| Pd Power Dissipation | 1 W | - |
| Configuration | Single | Single |
| Channel Mode | Enhancement | - |
| Packaging | Reel | Reel |
| Height | 1.5 mm | 1.5 mm |
| Length | 4.5 mm | 4.5 mm |
| Series | BSS606 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 2.5 mm | 2.5 mm |
| Brand | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 6 S | - |
| Fall Time | 2.1 ns | - |
| Product Type | MOSFET | MOSFET |
| Rise Time | 2.6 ns | - |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 13 ns | - |
| Typical Turn On Delay Time | 5.6 ns | - |
| Part # Aliases | BSS606N H6327 SP000691152 | BSS606NH6327XT BSS606NH6327XTSA1 SP000691152 |
| Unit Weight | 0.004603 oz | - |
| Product | - | MOSFET Small Signal |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSS606NH6327XTSA1 | MOSFET N-Ch 60V 3.2A SOT-89-3 | |
| BSS606N H6327 | MOSFET N-Ch 60V 2.3A SOT-89-3 | ||
| BSS606N H6327 | Trans MOSFET N-CH 60V 3.2A Automotive T/R | ||
| BSS606NH6327XTSA1 | MOSFET N-CH 60V 3.2A SOT89 | ||
| BSS606N | ブランドニューオリジナル | ||
| BSS606NH6327 | Nchannel 60V 3.2A 90mO @4.5V - Bulk (Alt: BSS606NH6327) |