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| PartNumber | BSS670S2LH6327XT | BSS670S2LH6327XTSA1 | BSS670S2LH6433XTMA1 |
| Description | MOSFET N-Ch 55V 540mA SOT-23-3 | MOSFET N-Ch 55V 540mA SOT-23-3 | MOSFET SMALL SIGNAL+P-CH |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-23-3 | SOT-23-3 | SOT-23-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 55 V | 55 V | 55 V |
| Id Continuous Drain Current | 540 mA | 540 mA | 540 mA |
| Rds On Drain Source Resistance | 650 mOhms | 650 mOhms | 650 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | 1.2 V |
| Vgs Gate Source Voltage | 10 V | 10 V | 20 V |
| Qg Gate Charge | 1.7 nC | 1.7 nC | 2.26 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 360 mW | 360 mW | 360 mW |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Qualification | AEC-Q101 | AEC-Q101 | - |
| Packaging | Reel | Reel | Reel |
| Height | 1.1 mm | 1.1 mm | 1.1 mm |
| Length | 2.9 mm | 2.9 mm | 2.9 mm |
| Series | BSS670S2 | BSS670S2 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 1.3 mm | 1.3 mm | 1.3 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 600 mS | 600 mS | 0.6 S |
| Fall Time | 24 ns | 24 ns | 24 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 25 ns | 25 ns | 25 ns |
| Factory Pack Quantity | 3000 | 3000 | 10000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 21 ns | 21 ns | 21 ns |
| Typical Turn On Delay Time | 9 ns | 9 ns | 9 ns |
| Part # Aliases | BSS670S2LH6327XTSA1 SP000928950 | BSS670S2L BSS67S2LH6327XT H6327 SP000928950 | BSS670S2L H6433 SP001341854 |
| Unit Weight | 0.000282 oz | 0.000282 oz | 0.000282 oz |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSS670S2LH6327XT | MOSFET N-Ch 55V 540mA SOT-23-3 | |
| BSS670S2LH6327XTSA1 | MOSFET N-Ch 55V 540mA SOT-23-3 | ||
| BSS670S2LH6433XTMA1 | MOSFET SMALL SIGNAL+P-CH | ||
| BSS670S2LH6327XTSA1 | MOSFET N-CH 55V 540MA SOT23 | ||
| BSS670S2LH6433XTMA1 | MOSFET N-CH 55V 540MA SOT23 | ||
| BSS670S2LH6327 | 55V,540MA,N-channel Power MOSFET | ||
| BSS670S2LH6327 , MAX6383 | ブランドニューオリジナル | ||
| BSS670S2LH6327. | ブランドニューオリジナル | ||
| BSS670S2LH6327/SN | ブランドニューオリジナル | ||
| BSS670S2LH6327XT | MOSFET N-Ch 55V 540mA SOT-23-3 | ||
| BSS670S2LH6327XTSA1-CUT TAPE | ブランドニューオリジナル |