| PartNumber | BSZ040N06LS5ATMA1 | BSZ040N04LSGATMA1 | BSZ040N04LS G |
| Description | MOSFET MV POWER MOS | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSDSON-8 | PG-TSDSON-8 | TSDSON-8 |
| Packaging | Reel | Reel | Reel |
| Height | 1.1 mm | 1.1 mm | 1.1 mm |
| Length | 3.3 mm | 3.3 mm | 3.3 mm |
| Width | 3.3 mm | 3.3 mm | 3.3 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | BSZ040N06LS5 SP001385578 | BSZ040N04LS BSZ4N4LSGXT G SP000388295 | BSZ040N04LSGATMA1 BSZ4N4LSGXT SP000388295 |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 40 V | 40 V |
| Id Continuous Drain Current | - | 40 A | 40 A |
| Rds On Drain Source Resistance | - | 4 mOhms | 3.3 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 1.2 V | 1.2 V |
| Vgs Gate Source Voltage | - | 10 V | 20 V |
| Qg Gate Charge | - | 48 nC | 64 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 69 W | 69 W |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | Enhancement |
| Tradename | - | OptiMOS | OptiMOS |
| Series | - | OptiMOS 3 | OptiMOS 3 |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Forward Transconductance Min | - | 40 S | 40 S |
| Fall Time | - | 5.4 ns | 5.4 ns |
| Rise Time | - | 4.8 ns | 4.8 ns |
| Typical Turn Off Delay Time | - | 33 ns | 33 ns |
| Typical Turn On Delay Time | - | 8.5 ns | 8.5 ns |
| Unit Weight | - | 0.004030 oz | 0.003527 oz |