 |  | | |
| PartNumber | BSZ0589NSATMA1 | BSZ058N03LSGATMA1 | BSZ058N03LS G |
| Description | MOSFET | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Part # Aliases | BSZ0589NS SP001586396 | BSZ058N03LS BSZ58N3LSGXT G SP000307424 | BSZ058N03LSGATMA1 BSZ58N3LSGXT SP000307424 |
| Technology | - | Si | Si |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Package / Case | - | TSDSON-8 | TSDSON-8 |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 30 V | 30 V |
| Id Continuous Drain Current | - | 40 A | 40 A |
| Rds On Drain Source Resistance | - | 4.8 mOhms | 4.8 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 1 V | 1 V |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Qg Gate Charge | - | 30 nC | 30 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 45 W | 45 W |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | Enhancement |
| Height | - | 1.1 mm | 1.1 mm |
| Length | - | 3.3 mm | 3.3 mm |
| Series | - | OptiMOS 3 | OptiMOS 3 |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Width | - | 3.3 mm | 3.3 mm |
| Forward Transconductance Min | - | 36 S | 36 S |
| Fall Time | - | 3.2 ns | 3.2 ns |
| Rise Time | - | 3.6 ns | 3.6 ns |
| Typical Turn Off Delay Time | - | 19 ns | 19 ns |
| Typical Turn On Delay Time | - | 4.6 ns | 4.6 ns |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ0589NSATMA1 | MOSFET | |
| BSZ058N03LSGATMA1 | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | ||
| BSZ058N03LS G | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | ||
| BSZ058N03MSGXT | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | ||
| BSZ058N03MS G | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | ||
| BSZ058N03LSGATMA1 | MOSFET N-CH 30V 40A TSDSON-8 | ||
| BSZ058N03MSGATMA1 | MOSFET N-CH 30V 40A TSDSON-8 | ||
| BSZ0589NSATMA1 | MOSFET N-CHANNEL 30V 17A 8TDSON | ||
| BSZ058N03MSGXT | MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M | ||
| BSZ058N03L | ブランドニューオリジナル | ||
| BSZ058N03LS | ブランドニューオリジナル | ||
| BSZ058N03LSG | 40 A, 30 V, 0.0089 ohm, N-CHANNEL, Si, POWER, MOSFET | ||
| BSZ058N03MSG | Trans MOSFET N-CH 30V 14A 8-Pin TSDSON T/R (Alt: BSZ058N03MS G) | ||
| BSZ058N03MSG QFN8 | ブランドニューオリジナル | ||
| BSZ058N03MSGATMA1 , TFZV | ブランドニューオリジナル | ||
| BSZ058N03S G | ブランドニューオリジナル | ||
| BSZ058N03LSGATMA1-CUT TAPE | ブランドニューオリジナル | ||
| BSZ058N03LS G | IGBT Transistors MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3 | ||
| BSZ058N03MS G | IGBT Transistors MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M |