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| PartNumber | BSZ070N08LS5ATMA1 | BSZ075N08NS5ATMA1 | BSZ0703LSATMA1 |
| Description | MOSFET | MOSFET N-Ch 80V 40A TSDSON-8 | MOSFET N-CH 8TDSON |
| Manufacturer | Infineon | Infineon | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TSDSON-8 | TSDSON-8 | - |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | - |
| Height | 1.1 mm | 1.1 mm | - |
| Length | 3.3 mm | 3.3 mm | - |
| Series | OptiMOS 5 | OptiMOS 5 | - |
| Width | 3.3 mm | 3.3 mm | - |
| Brand | Infineon Technologies | Infineon Technologies | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 5000 | 5000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Part # Aliases | BSZ070N08LS5 SP001352992 | BSZ075N08NS5 SP001132454 | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 80 V | - |
| Id Continuous Drain Current | - | 40 A | - |
| Rds On Drain Source Resistance | - | 10.2 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 2.2 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 24 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 69 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel | - |
| Forward Transconductance Min | - | 21 S | - |
| Fall Time | - | 4 ns | - |
| Rise Time | - | 4 ns | - |
| Typical Turn Off Delay Time | - | 19 ns | - |
| Typical Turn On Delay Time | - | 10 ns | - |
| Unit Weight | - | 0.005503 oz | - |