 | | | |
| PartNumber | BSZ160N10NS3 G | BSZ160N10NS3GATMA1 | BSZ165N04NS G |
| Description | MOSFET N-Ch 100V 40A TSDSON-8 OptiMOS 3 | MOSFET N-Ch 100V 40A TSDSON-8 OptiMOS 3 | MOSFET N-Ch 40V 31A TSDSON-8 OptiMOS 3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSDSON-8 | TSDSON-8 | TSDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | 40 V |
| Id Continuous Drain Current | 40 A | 40 A | 31 A |
| Rds On Drain Source Resistance | 14 mOhms | 14 mOhms | 13.8 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 25 nC | 25 nC | 10 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 63 W | 63 W | 25 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.1 mm | 1.1 mm | 1.1 mm |
| Length | 3.3 mm | 3.3 mm | 3.3 mm |
| Series | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 3.3 mm | 3.3 mm | 3.3 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 16 S | 16 S | 12 S |
| Fall Time | 5 ns | 5 ns | 2.2 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 10 ns | 10 ns | 1 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 22 ns | 22 ns | 6.8 ns |
| Typical Turn On Delay Time | 13 ns | 13 ns | 5.4 ns |
| Part # Aliases | BSZ160N10NS3GATMA1 BSZ16N1NS3GXT SP000482390 | BSZ160N10NS3 BSZ16N1NS3GXT G SP000482390 | BSZ165N04NSGATMA1 BSZ165N4NSGXT SP000391523 |
| Unit Weight | - | 0.003527 oz | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ160N10NS3 G | MOSFET N-Ch 100V 40A TSDSON-8 OptiMOS 3 | |
| BSZ16DN25NS3 G | MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3 | ||
| BSZ16DN25NS3GATMA1 | MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3 | ||
| BSZ160N10NS3GATMA1 | MOSFET N-Ch 100V 40A TSDSON-8 OptiMOS 3 | ||
| BSZ165N04NS G | MOSFET N-Ch 40V 31A TSDSON-8 OptiMOS 3 | ||
| BSZ165N04NSGATMA1 | MOSFET N-Ch 40V 31A TSDSON-8 OptiMOS 3 | ||
| BSZ165N04NSGATMA1 | MOSFET N-CH 40V 31A TSDSON-8 | ||
| BSZ16DN25NS3GATMA1 | MOSFET N-CH 250V 10.9A 8TSDSON | ||
| BSZ160N10NS3GATMA1 | MOSFET N-CH 100V 40A TSDSON-8 | ||
| BSZ160N10NS3GXT | Trans MOSFET N-CH 100V 8A 8-Pin TSDSON EP T/R - Tape and Reel (Alt: BSZ160N10NS3GATMA1) | ||
| BSZ160N10NS3 | ブランドニューオリジナル | ||
| BSZ160N10NS3G | ブランドニューオリジナル | ||
| BSZ160N10NS3G. | ブランドニューオリジナル | ||
| BSZ165N04NS | ブランドニューオリジナル | ||
| BSZ165N04NS G | MOSFET N-Ch 40V 31A TSDSON-8 OptiMOS 3 | ||
| BSZ165N04NSG | ブランドニューオリジナル | ||
| BSZ16DN25NS3 G | MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3 | ||
| BSZ16DN25NS3 G(SP0007818 | ブランドニューオリジナル | ||
| BSZ16DN25NS3G | ブランドニューオリジナル | ||
| BSZ160N10NS3 G | IGBT Transistors MOSFET N-Ch 100V 40A TSDSON-8 OptiMOS 3 |