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| PartNumber | BSZ180P03NS3E G | BSZ180P03NS3 G | BSZ180P03NS3EGATMA1 |
| Description | MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSDSON-8 | TSDSON-8 | TSDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
| Id Continuous Drain Current | 39.6 A | 39.6 A | 39.6 A |
| Rds On Drain Source Resistance | 13.5 mOhms | 13.5 mOhms | 13.5 mOhms |
| Vgs th Gate Source Threshold Voltage | 3.1 V | 3.1 V | 3.1 V |
| Vgs Gate Source Voltage | 25 V | 25 V | 25 V |
| Qg Gate Charge | 30 nC | 30 nC | 30 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 40 W | 40 W | 40 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | - |
| Packaging | Reel | Reel | Reel |
| Height | 1.1 mm | 1.1 mm | 1.1 mm |
| Length | 3.3 mm | 3.3 mm | 3.3 mm |
| Series | OptiMOS P3 | OptiMOS P3 | BSZ180P03 |
| Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
| Width | 3.3 mm | 3.3 mm | 3.3 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 18 S | 18 S | 18 S |
| Fall Time | 3 ns | 3 ns | 3 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 11 ns | 11 ns | 11 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 20 ns | 20 ns | 20 ns |
| Typical Turn On Delay Time | 11 ns | 11 ns | 11 ns |
| Part # Aliases | BSZ180P03NS3EGATMA1 BSZ18P3NS3EGXT SP000709740 | BSZ180P03NS3GATMA1 BSZ18P3NS3GXT SP000709744 | BSZ180P03NS3E BSZ18P3NS3EGXT G SP000709740 |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ180P03NS3E G | MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | |
| BSZ180P03NS3GATMA1 | MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | ||
| BSZ180P03NS3 G | MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | ||
| BSZ180P03NS3EGATMA1 | MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | ||
| BSZ180P03NS3EGATMA1 | MOSFET P-CH 30V 39.6A TSDSON-8 | ||
| BSZ180P03NS3GATMA1 | MOSFET P-CH 30V 39.6A TSDSON-8 | ||
| BSZ180P03NS3 G | Trans MOSFET P-CH 30V 39.6A 8-Pin TSDSON T/R (Alt: BSZ180P03NS3 G) | ||
| BSZ180P03NS3E G | MOSFET P-Ch -30V -39.6A TSDSON-8 OptiMOS P3 | ||
| BSZ180P03NS3EG | Transistor MOSFET P-CH 30V 39.6A 8-Pin TSDSON T/R (Alt: BSZ180P03NS3E G) | ||
| BSZ180P03NS3G | ブランドニューオリジナル |