 | | | |
| PartNumber | BSZ440N10NS3 G | BSZ42DN25NS3GATMA1 | BSZ42DN25NS3 G |
| Description | MOSFET N-Ch 100V 18A TSDSON-8 OptiMOS 3 | MOSFET N-Ch 250V 5A TDSON-8 OptiMOS 3 | MOSFET N-Ch 250V 5A TDSON-8 OptiMOS 3 |
| Manufacturer | Infineon | Infineon | Infineon |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TSDSON-8 | TSDSON-8 | TSDSON-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 250 V | 250 V |
| Id Continuous Drain Current | 18 A | 5 A | 5 A |
| Rds On Drain Source Resistance | 38 mOhms | 371 mOhms | 371 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
| Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
| Qg Gate Charge | 9.1 nC | 5.5 nC | 5.5 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 29 W | 33.8 W | 33.8 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | OptiMOS | OptiMOS | OptiMOS |
| Packaging | Reel | Reel | Reel |
| Height | 1.1 mm | 1.1 mm | 1.1 mm |
| Length | 3.3 mm | 3.3 mm | 3.3 mm |
| Series | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Width | 3.3 mm | 3.3 mm | 3.3 mm |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Forward Transconductance Min | 8 S | 3 S | 3 S |
| Fall Time | 2 ns | 5 ns | 5 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 1.8 ns | 2 ns | 2 ns |
| Factory Pack Quantity | 5000 | 5000 | 5000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 9.1 ns | 8 ns | 8 ns |
| Typical Turn On Delay Time | 4.3 ns | 3 ns | 3 ns |
| Part # Aliases | BSZ440N10NS3GATMA1 BSZ44N1NS3GXT SP000482442 | BSZ42DN25NS3 BSZ42DN25NS3GXT G SP000781796 | BSZ42DN25NS3GATMA1 BSZ42DN25NS3GXT SP000781796 |
| Unit Weight | 0.003527 oz | 0.010582 oz | 0.003527 oz |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Infineon Technologies |
BSZ440N10NS3 G | MOSFET N-Ch 100V 18A TSDSON-8 OptiMOS 3 | |
| BSZ42DN25NS3GATMA1 | MOSFET N-Ch 250V 5A TDSON-8 OptiMOS 3 | ||
| BSZ440N10NS3GATMA1 | MOSFET N-Ch 100V 18A TSDSON-8 OptiMOS 3 | ||
| BSZ42DN25NS3 G | MOSFET N-Ch 250V 5A TDSON-8 OptiMOS 3 | ||
| BSZ42DN25NS3GATMA1 | MOSFET N-CH 250V 5A TSDSON-8 | ||
| BSZ440N10NS3GATMA1 | MOSFET N-CH 100V 18A TSDSON-8 | ||
| BSZ402 | ブランドニューオリジナル | ||
| BSZ42DN25NS3 G | MOSFET N-Ch 250V 5A TDSON-8 OptiMOS 3 | ||
| BSZ42DN25NS3G | ブランドニューオリジナル | ||
| BSZ440N10NS3 | ブランドニューオリジナル | ||
| BSZ440N10NS3 G | Trans MOSFET N-CH 100V 5.3A 8-Pin TSDSON EP | ||
| BSZ440N10NS3G | POWER FIELD-EFFECT TRANSISTOR, 5.3A I(D), 100V, 0.044OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | ||
| BSZ440N10NS3GS | ブランドニューオリジナル | ||
| BSZ440N10NS3GATMA1-CUT TAPE | ブランドニューオリジナル |