BUK7613

BUK7613-100E,118 vs BUK7613-75B,118 vs BUK7613-60E,118

 
PartNumberBUK7613-100E,118BUK7613-75B,118BUK7613-60E,118
DescriptionMOSFET N-channel TrenchMOS standard level FETMOSFET HIGH PERF TRENCHMOSMOSFET N-channel TrenchMOS standard level FET
ManufacturerNexperiaNexperiaNexperia
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3TO-263-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V75 V60 V
Id Continuous Drain Current72 A75 A58 A
Rds On Drain Source Resistance10.2 mOhms13 mOhms9.44 mOhms
Vgs th Gate Source Threshold Voltage3 V-3 V
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge69.4 nC-22.9 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation182 W157 W96 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
QualificationAEC-Q101AEC-Q101AEC-Q101
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandNexperiaNexperiaNexperia
Fall Time34.1 ns26 ns9.8 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time34 ns36 ns9.2 ns
Factory Pack Quantity800800800
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time44.8 ns55 ns21.9 ns
Typical Turn On Delay Time17.5 ns18 ns10.8 ns
Packaging-ReelReel
Height-4.5 mm-
Length-10.3 mm-
Width-9.4 mm-
Part # Aliases-/T3 BUK7613-75B-
メーカー モデル 説明 RFQ
Nexperia
Nexperia
BUK7613-100E,118 MOSFET N-channel TrenchMOS standard level FET
BUK7613-75B,118 MOSFET HIGH PERF TRENCHMOS
BUK7613-60E,118 MOSFET N-channel TrenchMOS standard level FET
BUK7613-60E,118 MOSFET N-CH 60V 58A D2PAK
BUK7613-100E,118 Darlington Transistors MOSFET N-channel TrenchMOS standard level FET
BUK7613-75B,118 RF Bipolar Transistors MOSFET HIGH PERF TRENCHMOS
BUK7613-75B118 Now Nexperia BUK7613-75 - Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, D2PAK
BUK7613-100E118 - Bulk (Alt: BUK7613-100E118)
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