BUK767

BUK7675-55A,118 vs BUK7675-100A,118

 
PartNumberBUK7675-55A,118BUK7675-100A,118
DescriptionMOSFET TAPE13 PWR-MOSMOSFET TAPE13 PWR-MOS
ManufacturerNexperiaNexperia
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-263-3TO-263-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage55 V100 V
Id Continuous Drain Current20.3 A23 A
Rds On Drain Source Resistance75 mOhms75 mOhms
Vgs Gate Source Voltage20 V20 V
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C
Pd Power Dissipation62 W99 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
QualificationAEC-Q101AEC-Q101
PackagingReelReel
Height4.5 mm4.5 mm
Length10.3 mm10.3 mm
Transistor Type1 N-Channel1 N-Channel
Width9.4 mm9.4 mm
BrandNexperiaNexperia
Fall Time40 ns24 ns
Product TypeMOSFETMOSFET
Rise Time50 ns39 ns
Factory Pack Quantity800800
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time70 ns26 ns
Typical Turn On Delay Time10 ns8 ns
Part # Aliases/T3 BUK7675-55A/T3 BUK7675-100A
Unit Weight0.050375 oz-
メーカー モデル 説明 RFQ
Nexperia
Nexperia
BUK7675-55A,118 MOSFET TAPE13 PWR-MOS
BUK7675-100A,118 MOSFET TAPE13 PWR-MOS
BUK7675-100A,118 RF Bipolar Transistors MOSFET TAPE13 PWR-MOS
BUK7675-55A,118 RF Bipolar Transistors MOSFET TAPE13 PWR-MOS
BUK7675-55A118 Now Nexperia BUK7675-55A - Power Field-Effect Transistor, 20.3A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
BUK7675-55 ブランドニューオリジナル
BUK7675-55A ブランドニューオリジナル
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