BUK9608-55B

BUK9608-55B,118 vs BUK9608-55B vs BUK9608-55B118

 
PartNumberBUK9608-55B,118BUK9608-55BBUK9608-55B118
DescriptionMOSFET HIGH PERF TRENCHMOS- Bulk (Alt: BUK9608-55B118)
ManufacturerNexperia--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseTO-263-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage55 V--
Id Continuous Drain Current110 A--
Rds On Drain Source Resistance7 mOhms--
Vgs Gate Source Voltage15 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation203 W--
ConfigurationSingle--
Channel ModeEnhancement--
QualificationAEC-Q101--
PackagingReel--
Height4.5 mm--
Length10.3 mm--
Transistor Type1 N-Channel--
Width9.4 mm--
BrandNexperia--
Fall Time86 ns--
Product TypeMOSFET--
Rise Time123 ns--
Factory Pack Quantity800--
SubcategoryMOSFETs--
Typical Turn Off Delay Time131 ns--
Typical Turn On Delay Time29 ns--
Part # Aliases/T3 BUK9608-55B--
メーカー モデル 説明 RFQ
Nexperia
Nexperia
BUK9608-55B,118 MOSFET HIGH PERF TRENCHMOS
BUK9608-55B,118 RF Bipolar Transistors MOSFET HIGH PERF TRENCHMOS
BUK9608-55B ブランドニューオリジナル
BUK9608-55B118 - Bulk (Alt: BUK9608-55B118)
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