 |  | | |
| PartNumber | BUK9610-100B,118 | BUK9610-100B | BUK9610-100B118 |
| Description | MOSFET HIGH PERF TRENCHMOS | Now Nexperia BUK9610-100B - Power Field-Effect Transistor, 110A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | |
| Manufacturer | Nexperia | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 100 V | - | - |
| Id Continuous Drain Current | 110 A | - | - |
| Rds On Drain Source Resistance | 9.7 mOhms | - | - |
| Vgs Gate Source Voltage | 15 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 300 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | - | - |
| Height | 4.5 mm | - | - |
| Length | 10.3 mm | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 9.4 mm | - | - |
| Brand | Nexperia | - | - |
| Fall Time | 94 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 110 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 250 ns | - | - |
| Typical Turn On Delay Time | 60 ns | - | - |
| Part # Aliases | /T3 BUK9610-100B | - | - |
| メーカー | モデル | 説明 | RFQ |
|---|---|---|---|
Nexperia |
BUK9610-100B,118 | MOSFET HIGH PERF TRENCHMOS | |
| BUK9610-100B,118 | MOSFET HIGH PERF TRENCHMOS | ||
NXP Semiconductors |
BUK9610-55A,118 | MOSFET N-CH 55V 75A D2PAK | |
| BUK9610-100B | ブランドニューオリジナル | ||
| BUK9610-100B118 | Now Nexperia BUK9610-100B - Power Field-Effect Transistor, 110A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | ||
| BUK9610-55A | ブランドニューオリジナル |